OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MRF7S38075HSR3

P1-P3P4-P6P7-P9P10-P12
4
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
Figure 1. MRF7S38075HR3(HSR3) Test Circuit Schematic
Z13 0.358″ x 0.150″ Microstrip
Z14 0.541″ x 0.070″ Microstrip
Z15 0.911″ x 0.560″ Microstrip
Z16 0.379″ x 0.560″ Microstrip
Z17 0.300″ x 0.084″ Microstrip
Z18 0.200″ x 0.240″ Microstrip
Z19 0.047″ x 0.240″ x 0.140″ Taper
Z20 0.463″ x 0.084″ Microstrip
Z21 0.089″ x 0.142″ Microstrip
Z22 0.657″ x 0.084″ Microstrip
PCB Arlon CuClad 250GX- 0300- 55- 22, 0.030″, ε
r
= 2.55
Z1 0.427″ x 0.084” Microstrip
Z2 0.066″ x 0.192″ x 0.084″ Taper
Z3 0.045″ x 0.192″ Microstrip
Z4 0.044″ x 0.310″ Microstrip
Z5 0.150″ x 0.430″ Microstrip
Z6 0.107″ x 0.240″ Microstrip
Z7 0.155″ x 0.400″ Microstrip
Z8 0.943″ x 0.084″ Microstrip
Z9 0.158″ x 0.600″ Microstrip
Z10 0.110″ x 0.600″ Microstrip
Z11 0.802″ x 0.150″ Microstrip
Z12 0.150″ x 0.155″ Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C8
Z1 Z2 Z3 Z4
C1
C4
Z11
Z14
B1
Z5 Z7
Z15 Z16 Z22Z17 Z18 Z19 Z20 Z21
C11
+
C10
+
C9
+
C7C6
Z10Z9Z8Z6
Z12Z13
C2C5
+
C3
R1
B2
C12
Table 5. MRF7S38075HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 Small Ferrite Beads 2743019447 Fair Rite
C1, C2, C4, C6 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC
C3, C7 100 pF Chip Capacitors ATC100B101FT500XT ATC
C5 22 µF, 35 V Electrolytic Capacitor EMVY350ADA221MHA0G Nippon Chemi- Con
C9 100 µF, 50 V Electrolytic Capacitor MCHT101M1HB -1017 -RF Multicomp
C10, C11 470 µF, 63 V Electrolytic Capacitors EKME630ELL471MK25S Multicomp
C12, C8 0.01 µF, 50 V Chip Capacitors C1825C103J5RAC Kemet
R1 180 kΩ, 1/4 W Chip Resistor CRCW12061803FKEA Vishay
MRF7S38075HR3 MRF7S38075HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF7S38075HR3(HSR3) Test Circuit Component Layout
C5
C3
B1
C12
B2
R1
C2
C1
C10
C11
C9
C7
C8
C6
C4
CUT OUT AREA
MRF7S38705 Rev. C
6
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ P
out
= 12 Watts Avg.
−20
−8
−12
−16
11.5
15.5
−55
16
14
12
−49
−51
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
14.5
14
13.5
13
12.5
3450 3500 3600
10
−53
−24
IRL
G
ps
η
D
V
DD
= 30 Vdc, P
out
= 12 W (Avg.), I
DQ
= 900 mA, 802.16d
64 QAM
3
/
4,
4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
3525 3575
ACPR −L
ACPR−U
12
−47
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ P
out
= 23 Watts Avg.
−20
−8
−12
−16
11
15
−46
24
22
20
−40
−42
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
14.5
14
13.5
13
12.5
18
−44
−24
IRL
G
ps
V
DD
= 30 Vdc, P
out
= 23 W (Avg.), I
DQ
= 900 mA, 802.16d
64 QAM
3
/
4,
4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
ACPR −L
ACPR−U
12
−38
Figure 5. Two- Tone Power Gain versus
Output Power
9
16
1
I
DQ
= 1350 mA
P
out
, OUTPUT POWER (WATTS) PEP
14
13
11
10 100
G
ps
, POWER GAIN (dB)
V
DD
= 30 Vdc, I
DQ
= 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
12
15
1125 mA
900 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
I
DQ
= 450 mA
P
out
, OUTPUT POWER (WATTS) PEP
10
−20
−30
−40
−50
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
100
−10
V
DD
= 30 Vdc, I
DQ
= 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
1350 mA
675 mA
900 mA
35503475
3425
3400
3450 3500 36003525 357535503475
3425
3400
11.5
η
D
10
200
675 mA
450 mA
200
1125 mA
P1-P3P4-P6P7-P9P10-P12

MRF7S38075HSR3

Mfr. #:
Buy MRF7S38075HSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 3600MHZ 12W 30V NI780HS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet