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DS1225AB-85
P1-P3
P4-P6
P7-P9
DS12
25AB/AD
4
o
f
9
(T
A
: Se
e N
ote
10)
(V
CC
=5V ±
5%
f
or DS
12
25AB
)
AC ELECTRICAL CH
ARACTERISTICS
(V
CC
=5V
± 1
0%
for D
S1
225A
D)
PARAME
TER
SYMB
OL
DS1225AB-70
DS1225AD-70
UNITS
NOTES
M
IN
MAX
Re
ad
C
yc
le
T
ime
t
RC
70
ns
Acc
e
s
s T
ime
t
ACC
70
ns
OE
t
o
O
ut
p
ut
Va
lid
t
OE
35
ns
CE
t
o O
ut
put
Va
lid
t
CO
70
ns
OE
or
CE
to
Out
put
Ac
t
ive
t
COE
5
ns
5
O
u
t
p
u
t
H
ig
h Z
fr
o
m D
e
s
e
le
c
t
io
n
t
OD
25
ns
5
Output H
ol
d f
ro
m
Address
Change
t
OH
5
ns
Wr
it
e C
yc
le T
ime
t
WC
70
ns
Wri
t
e Pu
l
s
e Width
t
WP
55
ns
3
A
ddres
s Set
up Tim
e
t
AW
0
ns
Wri
t
e Reco
very Time
t
WR1
t
WR2
0
10
ns
ns
12
13
O
u
t
p
u
t
H
ig
h Z
fr
o
m
WE
t
ODW
25
ns
5
Output Ac
t
ive f
ro
m
WE
t
OEW
5
ns
5
Da
t
a
S
et
u
p T
ime
t
DS
30
ns
4
Da
t
a
Ho
ld T
ime
t
DH1
t
DH2
0
10
ns
ns
12
13
DS12
25AB/AD
5
o
f
9
READ CYCL
E
SEE NOTE 1
WR
ITE C
YC
LE
1
SEE NOTE
S 2
, 3, 4, 6, 7, 8 AND 12
WR
ITE C
YC
LE
2
SEE NOTE
S 2
, 3, 4, 6, 7, 8 AND 13
DS12
25AB/AD
6
o
f
9
POWER
-
DOWN/P
OWER
-
UP
COND
ITION
SEE NOTE 11
POWER
-
DOWN/P
OWER
-
UP
TIMIN
G
(T
A
: Se
e N
ote
10)
PARAM
ETER
SYMB
OL
M
IN
TYP
MAX
UNITS
NO
TES
V
CC
Fai
l
D
et
ect to
CE
a
nd
WE
I
na
ct
ive
t
PD
1.
5
µ
s
11
V
CC
s
l
e
w
fr
o
m V
TP
to
0V
t
F
300
µ
s
V
CC
s
le
w
f
ro
m
0V to
V
TP
t
R
300
µ
s
V
CC
V
a
lid
t
o
CE
a
nd
WE
I
n
act
ive
t
PU
2
ms
V
CC
Va
l
id to E
n
d of
Wri
t
e Prot
ec
t
i
o
n
t
REC
125
ms
(T
A
=
+
25°C
)
PARAM
ETER
SYMB
OL
MIN
TYP
MAX
UNITS
NOTES
Expect
ed Dat
a Retention T
im
e
t
DR
10
years
9
WARN
ING:
Under no c
i
rcu
mstance ar
e negat
iv
e und
ershoot
s,
of
any ampli
t
ude, all
owed w
hen
device is in
batt
ery
ba
ckup m
ode.
P1-P3
P4-P6
P7-P9
DS1225AB-85
Mfr. #:
Buy DS1225AB-85
Manufacturer:
Maxim Integrated
Description:
NVRAM 64k Nonvolatile SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
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