DS1225AB-85

DS1225AB/AD
4 of 9
(T
A
: See Note 10)
(V
CC
=5V ± 5% for DS1225AB)
AC ELECTRICAL CHARACTERISTICS (V
CC
=5V ± 10% for DS1225AD)
PARAMETER SYMBOL
DS1225AB-70
DS1225AD-70
UNITS NOTES
MIN
MAX
Read Cycle Time
t
RC
70
ns
Access Time
t
ACC
70
ns
OE
to Output Valid
t
OE
35
ns
CE
to Output Valid
t
CO
70
ns
OE
or
CE
to Output Active
t
COE
5
ns 5
Output High Z from Deselection
t
OD
25
ns
5
Output Hold from Address
Change
t
OH
5
ns
Write Cycle Time
t
WC
70
ns
Write Pulse Width
t
WP
55
ns
3
Address Setup Time
t
AW
0
ns
Write Recovery Time
t
WR1
t
WR2
0
10
ns
ns
12
13
Output High Z from
WE
t
ODW
25
ns 5
Output Active from
WE
t
OEW
5
ns 5
Data Setup Time
t
DS
30
ns
4
Data Hold Time
t
DH1
t
DH2
0
10
ns
ns
12
13
DS1225AB/AD
5 of 9
READ CYCLE
SEE NOTE 1
WRITE CYCLE 1
SEE NOTES 2, 3, 4, 6, 7, 8 AND 12
WRITE CYCLE 2
SEE NOTES 2, 3, 4, 6, 7, 8 AND 13
DS1225AB/AD
6 of 9
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING (T
A
: See Note 10)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
V
CC
Fail Detect to
CE
and
WE
Inactive
t
PD
1.5
µs
11
V
CC
slew from V
TP
to 0V t
F
300
µs
V
CC
slew from 0V to V
TP
t
R
300
µs
V
CC
Valid to
CE
and
WE
Inactive
t
PU
2 ms
V
CC
Valid to End of Write Protection t
REC
125 ms
(T
A
= +25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Expected Data Retention Time
t
DR
10
years
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.

DS1225AB-85

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
NVRAM 64k Nonvolatile SRAM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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