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IS64WV12816DBLL-12CTLA3-TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
Integrated Silicon Solution, Inc. — www.issi.com7
Rev. E
01/10/2013
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
OPERATING RANGE (VDD) (IS61WV12816DBLL)
(1)
Range Ambient Temperature VDD (8 nS)
1
VDD (10 nS)
1
Commercial 0°Cto+70°C 3.3V+5% 2.4V-3.6V
Industrial –40°Cto+85°C 3.3V+5% 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the range
of 3.3V +5%,thedevicemeets8ns.
OPERATING RANGE (VDD) (IS64WV12816DBLL)
(2,3)
Range Ambient Temperature VDD (10 nS)
2
VDD (12 nS)
2
Automotive –40°Cto+125°C 3.3V+5% 2.4V-3.6V
Note:
2. When operated in the range of 2.4V-3.6V, the device meets 12ns. When operated in the range of
3.3V +5%,thedevicemeets10ns.
3. If the device is operated in the temperature range of -40
o
Cto+85
o
C, the device meets 10ns.
HIGH SPEED (IS61WV12816DALL/DBLL)
OPERATING RANGE (VDD) (IS61WV12816DALL)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 20ns
Industrial –40°Cto+85°C 1.65V-2.2V 20ns
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10 -12 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
Icc Vdd Dynamic Operating Vdd = Max., Com. — 65 — 60 —  55 — 40 mA
Supply Current Iout = 0 mA, f = fmAX Ind. — 70 — 65 —  55 — 45
CE = VIL Auto.
(3)
— — — 75 —  60 — 50
VIn ≥ Vdd – 0.3V, or typ.
(2)
45 45
VIn ≤ 0.4V
Icc1 Operating Vdd = Max., Com. — 2 — 2 — 2 — 2 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 2 — 2 — 2 — 2
CE = VIL Auto. — — — 2 — 2 — 2
VIn ≥ Vdd – 0.3V, or
VIn ≤ 0.4V
Isb2 CMOS Standby Vdd = Max., Com. — 50 — 50 — 50 — 50
µ
A
Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 70 — 70 — 70 — 70
VIn ≥ Vdd – 0.2V, or Auto. — — — 100 — 100 — 100
VIn ≤ 0.2V
, f = 0 typ.
(2)
4 4
Note:
1. At f = fmAX,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.
2.TypicalvaluesaremeasuredatVdd=3.0V,TA=25
o
C and not 100% tested.
3.ForAutomotivegradeat15ns,typ.Icc=38mA,not100%tested.
8 Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
01/10/2013
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-25 -35 -45
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
Icc Vdd Dynamic Operating Vdd = Max., Com. — 20 — 20 — 18 mA
Supply Current Iout = 0 mA, f = fmAX Ind. — 25 — 25 — 20
CE = VIL Auto. — 40 — 35 — 30
VIn ≥ Vdd – 0.3V, or typ.
(2)
18
VIn ≤ 0.4V
Icc1 Operating Vdd = Max., Com. — 2 — 2 — 2 mA
Supply Current Iout = 0 mA, f = 0 Ind. — 2 — 2 — 2
CE = VIL Auto. — 2 — 2 — 2
VIn ≥ Vdd – 0.3V, or
VIn ≤ 0.4V
Isb2 CMOS Standby Vdd = Max., Com. — 40 — 40 — 40
µ
A
Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 50 — 50 — 50
VIn ≥ Vdd – 0.2V, or Auto. — 75 — 75 — 75
VIn ≤ 0.2V
, f = 0 typ.
(2)
4
Note:
1. At f = fmAX,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.
2.TypicalvaluesaremeasuredatVdd=3.0V,TA=25
o
C and not 100% tested.
OPERATING RANGE (VDD) (IS61WV12816DBLS)
Range Ambient Temperature VDD (35 nS)
Commercial 0°Cto+70°C 2.4V-3.6V
Industrial –40°Cto+85°C 2.4V-3.6V
LOW POWER (IS61WV12816DALS/DBLS)
OPERATING RANGE (VDD) (IS61WV12816DALS)
Range Ambient Temperature VDD Speed
Commercial 0°Cto+70°C 1.65V-2.2V 45ns
Industrial –40°Cto+85°C 1.65V-2.2V 45ns
OPERATING RANGE (VDD) (IS64WV12816DBLS)
Range Ambient Temperature VDD (35 nS)
Automotive –40°Cto+125°C 2.4V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com9
Rev. E
01/10/2013
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10 -12
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
trc ReadCycleTime 8 — 10 — 12 — ns
tAA AddressAccessTime — 8 — 10 — 12 ns
toHA OutputHoldTime 2.0 — 2.0 — 3 — ns
tAce CEAccessTime — 8 — 10 — 12 ns
tdoe OEAccessTime — 5.5 — 6.0 — 6.0 ns
tHzoe
(2)
OE to High-Z Output — 3 — 4 — 6 ns
tLzoe
(2)
OE to Low-Z Output 0 — 0 — 0 — ns
tHzce
(2
CE to High-Z Output 0 3 0 4 0 6 ns
tLzce
(2)
CE to Low-Z Output 3 — 3 — 3 — ns
tbA LB, UBAccessTime — 5.5 — 6.5 — 6.5 ns
tHzb
(2)
LB, UBtoHigh-ZOutput 0 5.5 0 6.5 0 6.5 ns
tLzb
(2)
LB, UB to Low-Z Output 0 — 0 — 0 — ns
tPu PowerUpTime 0 — 0 — 0 — ns
tPd PowerDownTime — 8 — 10 — 10 ns
Notes:
1. Testconditionsassumesignaltransitiontimesof3nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V
andoutputloadingspeciedinFigure1.
2. TestedwiththeloadinFigure2.Transitionismeasured±500mVfromsteady-statevoltage.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

IS64WV12816DBLL-12CTLA3-TR

Mfr. #:
Buy IS64WV12816DBLL-12CTLA3-TR
Manufacturer:
ISSI
Description:
SRAM 2M (128Kx16) 12ns Async SRAM
Lifecycle:
New from this manufacturer.
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