VS-ST303C12LFK0

VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
4
Document Number: 94373
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.010 0.007 0.007
T
J
= T
J
max. K/W
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
0
250 300 350 400
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50
100
150 200
40
50
60
70
80
90
100
110
120
130
ST303C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.09 K/W
Ø
Conduction angle
60°30° 90°
120°
18
0
500 600 700
Average On-State Current (A)
100 300
200 400
Maximum Allowable
Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
ST303C..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.09 K/W
Ø
Conduction period
30°
60°
90°
120°
18
DC
0
400300 500 600 700
800
Average On-State Current (A)
100 200
Maximum Allowable
Heatsink Temperature (°C)
30
20
40
50
60
70
80
90
100
110
120
130
30°
60°
90°
18
ST303C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.04 K/W
Ø
Conduction angle
120°
Average On-State Current (A)
Maximum Allowable
Heatsink Temperature (°C)
0
600 800
1000
1200
200 400
20
30
40
50
60
70
80
90
100
110
120
130
ST303C..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.04 K/W
Ø
Conduction period
30°
60°
DC
18
90°
120°
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
5
Document Number: 94373
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0
500 600 700 800
100 300200 400
0
200
400
600
800
1000
1200
1400
1600
1800
2000
RMS limit
18
120°
90°
60°
30°
Ø
Conduction angle
ST303C..C Series
T
J
= 125 °C
Maximum Average On-State
Power Loss (W)
0
400 600 800 1000 1200
200
Average On-State Current (A)
0
400
800
1200
1600
2000
2400
2800
DC
18
120°
90°
60°
30°
RMS limit
ST303C..C Series
T
J
= 125 °C
Ø
Conduction period
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge
ST303C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
No voltage reapplied
Rated V
RRM
reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial T
J
= 125 °C
ST303C..C Series
100
012345678
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST303C..C Series
T
J
= 125 °C
T
J
= 25 °C
0.01 0.1 1 100.001
1
Square Wave Pulse Duration (s)
Z
thJ-hs
-
Transient Thermal
Impedance (K/W)
0.001
0.01
0.1
ST303C..C Series
Steady state value
R
thJ-hs
= 0.09 K/W
(Single side cooled)
R
thJ-hs
= 0.04 K/W
(Double side cooled)
(DC operation)
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
6
Document Number: 94373
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
2010 30 50 70 9040 60 80 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Q
rr
- Maximum Reverse Recovery Charge (µC)
80
100
120
140
160
180
200
220
240
260
280
300
320
ST303C..C Series
T
J
= 125 °C
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
20
20 30 50 70 9010 40 60 80 100
40
60
80
100
120
140
160
180
dI/dt - Rate of Fall of Forward Current (A/µs)
I
rr
- Maximum Reverse Recovery Current (A)
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
ST303C..C Series
T
J
= 125 °C
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 10 Ω
C
s
= 0.47 µF
V
D
= 80 % V
DRM
t
p
ST303C..C Series
Sinusoidal pulse
T
C
= 40 °C
50 Hz
100
200
500
400
1000
1500
2500
3000
2000
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST303C..C Series
Sinusoidal pulse
T
C
= 55 °C
50 Hz
100
500
400
1000
1500
2500
2000
3000
Snubber circuit
R
s
= 10 Ω
C
s
= 0.47 µF
V
D
= 80 % V
DRM
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 10 Ω
C
s
= 0.47 µF
V
D
= 80 % V
DRM
ST303C..C Series
Trapezoidal pulse
T
C
= 40 °C
dI/dt = 50 A/µs
t
p
50 Hz
100
500
400
1000
1500
2500
2000
3000
200
10 100 1000 10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
100
1000
10 000
Snubber circuit
R
s
= 10 Ω
C
s
= 0.47 µF
V
D
= 80 % V
DRM
ST303C..C Series
Trapezoidal pulse
T
C
= 55 °C
dI/dt = 50 A/µs
t
p
50 Hz
100
500
400
1000
1500
2500
2000
3000
200

VS-ST303C12LFK0

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1200 Volt 620 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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