VS-ST303C12LFK0

VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
7
Document Number: 94373
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 10 Ω
C
s
= 0.47 µF
V
D
= 80 % V
DRM
ST303C..C Series
Trapezoidal pulse
T
C
= 40 °C
dI/dt = 100 A/µs
t
p
50 Hz
100
500
400
1000
1500
2500
2000
3000
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 10 Ω
C
s
= 0.47 µF
V
D
= 80 % V
DRM
ST303C..C Series
Trapezoidal pulse
T
C
= 55 °C
dI/dt = 100 A/µs
t
p
50 Hz
100
500
400
1000
1500
2500
2000
3000
200
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
ST303C..C Series
Rectangular pulse
dI/dt = 50 A/µs
t
p
0.4
0.5
2
5
3
1
10
20 joules per pulse
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
V
GD
I
GD
(b)
(1) (2) (3) (4)
Device: ST303C..C Series
Frequency limited by P
G(AV)
(1) P
GM
= 10 W, t
p
= 20 ms
(2) P
GM
= 20 W, t
p
= 10 ms
(3) P
GM
= 40 W, t
p
= 5 ms
(4) P
GM
= 60 W, t
p
= 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
r
1 µs
b) Recommended load line for
30 % rated dI/dt: 10 V, 10 Ω
t
r
1 µs
(a)
T
J
= 40 °C
T
J
= 25 °C
T
J
= 125 °C
VS-ST303C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
8
Document Number: 94373
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
3 = Fast-on terminals
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn-off
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
10
6
- C = PUK case TO-200AB (E-PUK)
7
- Reapplied dV/dt code (for t
q
test condition)
8
-t
q
code
9
- 0 = Eyelet terminals
1 = Fast-on terminals
dV/dt - t
q
combinations available
dV/dt (V/µs) 20 50 100 200 400
10
12
CN DN EN
t
q
(µs)
2 = Eyelet terminals
11
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
* Standard part number.
All other types available only on request.
15 CL DL EL FL* HL
FN* HN
CM DM EM FM HM
20 CK DK EK FK* HK
15
18
CL - -
20 CK DK EK FK* HK
--
CP DP - -
25 CJ DJ EJ FJ* HJ
up to 800 V
t
q
(µs)
only for
1000 V/1200 V
30
-DHEHFHHH
-
(see Voltage Ratings table)
(gate and aux. cathode unsoldered leads)
(gate and aux. cathode unsoldered leads)
(gate and aux. cathode soldered leads)
(gate and aux. cathode soldered leads)
Device code
51 32 4 6 7 8 9 10 11
VS- ST 30 3 C 12 C H K 1 -
- Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075
Document Number: 95075 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 01-Aug-07 1
TO-200AB (E-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
14.1/15.1
(0.56/0.59)
25° ± 5°
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
42 (1.65) MAX.
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

VS-ST303C12LFK0

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1200 Volt 620 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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