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UBA2015T/1,118

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42
UBA2016A_15_15A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 16 November 2011 25 of 42
NXP Semiconductors
UBA2016A/15/15A
600 V fluorescent lamp driver
[1] Positive and negative latch-up currents tested at T
j
= 150 C by discharging a 22 F capacitor though a 50 series resistor with a
350 H
series inductor. Latch-up current values are in accordance with the general quality specification.
9. Thermal characteristics
10. Characteristics
ElectroStatic Discharge (ESD)
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM)
JEDEC Class 2 for pins: SLHB, IFB, EOL, CIFB,
CPT, IREF, VFB, CF, DIM, BOOST, PH/EN, FBPFC,
COMPPFC, AUXPFC, GPFC, VDD and GLHB
2+2kV
JEDEC Class 1C for pins: GHHB, FSHB and SHHB 1+1kV
Charge Device Model (CDM)
JEDEC Class 3 for pins: SLHB, IFB, EOL, VFB,
IREF, CIFB, CF, CPT, DIM, BOOST, PH/EN, FBPFC,
COMPPFC, AUXPFC, GPFC, VDD, GLHB
500 +500 V
JEDEC Class 2 for pins: SHHB, FSHB, GHHB 200 +200 V
Latch-up
I
lu
latch-up current
[1]
100 +100 mA
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages referenced to signal ground (GND
pin 15); current flow into the IC is positive.
Symbol Parameter Conditions Min Max Unit
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to
ambient
in free air; mounted on a single-sided PCB;
SO20 package
100 K/W
in free air; mounted on a single-sided PCB;
DIP20 package
90 K/W
Table 6. Characteristics
T
amb
= 25 °C; settings according to default setting
[1]
; all voltages referenced to GND; current flow into the IC is positive;
unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
High voltage
I
leak
leakage current V
FSHB
=630V;
V
GHHB
=630V;
V
SHHB
= 630 V; V
VDD
=0V
--2A
Start-up
V
startup(VDD)
start-up voltage on pin VDD 11.9 12.4 12.9 V
V
stop(VDD)
stop voltage on pin VDD 9.6 10.0 10.4 V
V
hys(VDD)
hysteresis voltage on pin VDD 2.1 2.4 2.7 V
I
stb(VDD)
standby current on pin VDD V
VDD
= 11.5 V 0.2 0.24 0.28 mA
I
pu(stb)(PH/EN)
standby pull-up current on pin PH/EN Standby or Stop state;
V
PH/EN
=0.25V
7.7 9 10.3 A
V
rst(VDD)
reset voltage on pin VDD 3.6 4.2 4.8 V
UBA2016A_15_15A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 16 November 2011 26 of 42
NXP Semiconductors
UBA2016A/15/15A
600 V fluorescent lamp driver
V
restart(VDD)
restart voltage on pin VDD 6.2 6.5 6.8 V
I
restart(VDD)
restart current on pin VDD V
VDD
= 9 V 0.85 1.1 1.35 mA
V
clamp(VDD)
clamp voltage on pin VDD IC off; I
VDD
= 0.33 mA 13.0 13.4 13.8 V
I
clamp(VDD)
clamp current on pin VDD IC off; V
VDD
= 14.0 V 25 45 - mA
I
VDD
current on pin VDD V
FBPFC
=1.2V;
V
COMPPFC
=1V
1.2 1.7 2.2 mA
PFC normal operation
t
on(PFC)
PFC on-time V
COMPPFC
= 350 mV 0.6 1 1.4 s
t
on(PFC)high
high PFC on-time V
COMPPFC
= V
high(COMPPFC)
24 28 32 s
t
off(PFC)low
low PFC off-time 1.7 2.0 2.3 s
t
leb(FBPFC)
leading edge blanking time on pin
FBPFC
from the start of rising edge on
pin GPFC
260 330 400 ns
V
reg(FBPFC)
regulation voltage on pin FBPFC V
COMPPFC
= 1.6 V 1.23 1.27 1.31 V
V
COMPPFC
= 200 mV 1.23 1.28 1.33 V
I
bias(FBPFC)
bias current on pin FBPFC V
FBPFC
= 1.27 V 4.5 5.0 5.5 A
g
m(PFC)
PFC transconductance V
COMPPFC
=1.5V;
1.2 V < V
FBPFC
<1.34V
25 30 35 A/V
V
th(VPFCok)FBPFC
PFC voltage OK threshold voltage on
pin FBPFC
0.95 1 1.05 V
V
det(demag)
demagnetization detection voltage on pin AUXPFC 50 100 150 mV
V
clamp(COMPPFC)
clamp voltage on pin COMPPFC V
FBPFC
= 1 V 2.85 3 3.15 V
PFC protection
t
on(PFC)nodemag
no demagnetization detected PFC
on-time
1.0 1.3 1.6 s
V
th(osp)(FBPFC)
open/short protection threshold voltage
on pin FBPFC
0.2 0.25 0.3 V
V
th(ov)(FBPFC)
overvoltage threshold voltage on pin
FBPFC
1.34 1.39 1.43 V
I
bias(AUXPFC)
bias current on pin AUXPFC V
AUXPFC
=0.1V 6 5 4 A
PFC driver
I
source(GPFC)
source current on pin GPFC V
GPFC
=4V; V
VDD
=12V 105 90 75 mA
R
sink(GPFC)
sink resistance on pin GPFC V
GPFC
=2V; V
VDD
= 12 V 13.5 16.0 18.5
HB preheat
R
ext(PH/EN)
external resistor on pin PH/EN 38.6 - - k
t
to(ph)
preheat time-out time C
CPT
= 100 nF 0.8 0.94 1.08 s
V
O(ph)(PH/EN)
preheat output voltage on pin PH/EN Preheat or Ignition state 1.78 1.84 1.9 V
V
ctrl(ph)SLHB
overcurrent protection threshold voltage
on pin SLHB
preheat 0.44 0.48 0.52 V
I
ch(CIFB)
charge current on pin CIFB no fault detected;
Preheat and Ignition states
only; V
CIFB
=1.5V
10.3 9.0 7.7 A
Table 6. Characteristics
…continued
T
amb
= 25 °C; settings according to default setting
[1]
; all voltages referenced to GND; current flow into the IC is positive;
unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
UBA2016A_15_15A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 16 November 2011 27 of 42
NXP Semiconductors
UBA2016A/15/15A
600 V fluorescent lamp driver
I
dch(CIFB)
discharge current on pin CIFB preheat overcurrent detected;
V
CIFB
=1.5V
7.7 9.0 10.3 A
f
sw(ph)
preheat switching frequency UBA2015; UBA2015A
R
ext(PH/EN)
=40k;
C
ext(CF)
=200pF
93 97.7 102.4 kHz
R
ext(PH/EN)
= 100 k;
C
ext(CF)
=200pF
62 66 70 kHz
HB lamp ignition
f
sw(high)
/f
sw(low)
high switching frequency to low
switching frequency ratio
2.2 2.4 2.6
V
fsw(low)(CIFB)
low switching frequency voltage on pin
CIFB
-3.0-V
V
th(lod)(IFB)
lamp on detection threshold voltage on
pin IFB
1 1.11 1.22 V
V
th(lod)(VFB)
lamp on detection threshold voltage on
pin VFB
0.9 1.0 1.1 V
V
(VregVth(lod))
regulation voltage to lamp-on-detect
threshold voltage difference
pin IFB 40 160 250 mV
t
d(lod)
lamp on detection delay time 2 3 4 ms
HB normal operation
f
sw(low)
low switching frequency C
CF
= 200 pF 41 43 45 kHz
20 - 80 kHz
V
high(CF)
high voltage on pin CF - 2.5 - V
V
reg(IFB)
regulation voltage on pin IFB V
CIFB
= 2 V; V
IFB
> 0 V 1.22 1.27 1.32 V
V
CIFB
= 2 V; V
DIM
= 127 mV;
V
IFB
>0V
77 127 177 mV
V
CIFB
= 2 V; V
IFB
< 0 V 1.34 1.27 1.2 V
V
CIFB
= 2 V; V
DIM
= 127 mV;
V
IFB
< 0 V
197 127 57 mV
I
ch(low)(CF)
low charge current on pin CF - 47 - A
V
i(IFB)
input voltage range on pin IFB V
CIFB
= 2 V 3.1 - +3.1 V
R
i(IFB)
input resistance on pin IFB V
IFB
=1V - 60 - k
V
IFB
= 1V - 30 - k
V
en(PH/EN)
enable voltage on pin PH/EN 0.21 0.25 0.29 V
V
O(burn)(PH/EN)
burn state output voltage on pin PH/EN Burn state 1.21 1.27 1.33 V
g
m(IFB)
IFB transconductance V
CIFB
= 2 V 14 16.5 19 A/V
I
O(clamp)(PH/EN)
output current clamp on pin PH/EN Preheat, Ignition or Burn
states; V
PH/EN
=0.2V
- - 0.16 mA
HB driver
I
source(GLHB)
source current on pin GLHB V
GLHB
=4V 105 90 75 mA
R
sink(GLHB)
sink resistance on pin GLHB V
GLHB
= 2 V 13.5 16 18.5
I
source(GHHB)
source current on pin GHHB V
SHHB
=0V; V
GHHB
=4V 105 90 75 mA
Table 6. Characteristics
…continued
T
amb
= 25 °C; settings according to default setting
[1]
; all voltages referenced to GND; current flow into the IC is positive;
unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P39P40-P42

UBA2015T/1,118

Mfr. #:
Buy UBA2015T/1,118
Manufacturer:
NXP Semiconductors
Description:
Display Drivers & Controllers 600V 0.16mA SO20
Lifecycle:
New from this manufacturer.
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