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SI4567DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12
Vishay Siliconix
Si4567DY
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
APPLICATIONS
• CCFL Inverter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
a
Q
g
(Typ.)
N-Channel 40
0.060 at V
GS
= 10 V 5.0
5.6
0.070 at V
GS
= 4.5 V 4.7
N-Channel - 40
0.085 at V
GS
= - 10 V - 4.4
6
0.122 at V
GS
= - 4.5 V - 3.7
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free)
Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
1
G
1
S
1
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
V
DS
40 - 40
V
Gate-Source Voltage
V
GS
± 16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
5- 4.4
A
T
C
= 70 °C
4.7 - 3.7
T
A
= 25 °C
4.1
b, c
- 3.6
b, c
T
A
= 70 °C
3.3
b, c
- 2.9
b, c
Pulsed Drain Current (10 µs Pulse Width)
I
DM
20 - 20
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
2.3 - 2.5
T
A
= 25 °C
1.5
b, c
- 1.6
b, c
Pulsed Source-Drain Current
I
SM
20 - 20
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
712
Single Pulse Avalanche Energy
E
AS
2.5 7.2 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
2.75 2.95
W
T
C
= 70 °C
1.75 1.90
T
A
= 25 °C
1.85
b, c
1.95
b, c
T
A
= 70 °C
1.18
b, c
1.25
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
N-Channel P-Channel
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
57 67.5 54 64
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
35 45 33 42
www.vishay.com
2
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
Vishay Siliconix
Si4567DY
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
N-Ch 40
V
V
GS
= 0 V, I
D
= - 250 µA
P-Ch - 40
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
N-Ch 40
I
D
= - 250 µA
P-Ch - 40
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA
N-Ch - 4.6
II
D
= - 250 µA
P-Ch 3.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 0.8 2.2
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 0.8 - 2.2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 16 V
N-Ch 100
nA
P-Ch - 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 40 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
N-Ch 10
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
P-Ch - 10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
N-Ch 20
A
V
DS
= - 5 V, V
GS
= - 10 V
P-Ch - 20
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 4.1 A
N-Ch 0.048 0.060
Ω
V
GS
= - 10 V, I
D
= - 3.6 A
P-Ch 0.068 0.085
V
GS
= 4.5 V, I
D
= 3.8 A
N-Ch 0.056 0.070
V
GS
= - 4.5 V, I
D
= - 2.9 A
P-Ch 0.097 0.122
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 4.1 A
N-Ch 15
S
V
DS
= - 15 V, I
D
= - 3.6 A
P-Ch 7
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
N-Ch 355
pF
P-Ch 480
Output Capacitance
C
oss
N-Ch 50
P-Ch 80
Reverse Transfer Capacitance
C
rss
N-Ch 29
P-Ch 56
Total Gate Charge
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
N-Ch 8 12
nC
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 5 A
P-Ch 12 18
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V I
D
= 5 A
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 5 A
N-Ch 3.7 6
P-Ch 6 9
Gate-Source Charge
Q
gs
N-Ch 1.1
P-Ch 1.5
Gate-Drain Charge
Q
gd
N-Ch 1.4
P-Ch 2.7
Gate Resistance
R
g
f = 1 MHz
N-Ch 1.6 3.4 5.2
Ω
P-Ch 2.8 5.7 8.6
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
3
Vishay Siliconix
Si4567DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Dynamic
a
Tu r n - O n D e l ay T ime
t
d(on)
N-Channel
V
DD
= 20 V, R
L
= 4 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 1 Ω
P-Channel
V
DD
= - 20 V, R
L
= 4 Ω
I
D
≅ - 1 A, V
GEN
= - 10 V, R
g
= 1 Ω
N-Ch 8 13
ns
P-Ch 10 15
Rise Time
t
r
N-Ch 20 30
P-Ch 16 25
Turn-Off Delay Time
t
d(off)
N-Ch 23 35
P-Ch 19 30
Fall Time
t
f
N-Ch 27 42
P-Ch 10 15
Tu r n - O n D e l ay T ime
t
d(on)
N-Channel
V
DD
= 20 V, R
L
= 4 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, R
g
= 1 Ω
P-Channel
V
DD
= - 20 V, R
L
= 4 Ω
I
D
≅ - 1 A, V
GEN
= - 4.5 V, R
g
= 16 Ω
N-Ch 74 110
P-Ch 23 35
Rise Time
t
r
N-Ch 95 145
P-Ch 93 140
Turn-Off Delay Time
t
d(off)
N-Ch 31 48
P-Ch 30 45
Fall Time
t
f
N-Ch 33 50
P-Ch 25 38
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
I
S
T
C
= 25 °C
N-Ch 2.3
A
P-Ch - 2.5
Pulse Diode Forward Current
a
I
SM
N-Ch 20
P-Ch - 20
Body Diode Voltage
V
SD
I
S
= 1.5 A
N-Ch 0.8 1.2
V
I
S
= - 1.6 A
P-Ch - 0.8 - 1.2
Body Diode Reverse Recovery Time
t
rr
N-Channel
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 2 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch 26 40
ns
P-Ch 26 40
Body Diode Reverse Recovery Charge
Q
rr
N-Ch 26 40
nC
P-Ch 22 35
Reverse Recovery Fall Time
t
a
N-Ch 13
ns
P-Ch 12
Reverse Recovery Rise Time
t
b
N-Ch 13
P-Ch 14
P1-P3P4-P6P7-P9P10-P12

SI4567DY-T1-GE3

Mfr. #:
Buy SI4567DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4599DY-T1-GE3
Lifecycle:
New from this manufacturer.
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