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SI4567DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12
www.vishay.com
4
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
Vishay Siliconix
Si4567DY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 thru 4 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.03
0.04
0.05
0.06
0.07
0.08
048121620
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (m Ω)
0
2
4
6
8
10
0.0 2.5 5.0 7.5 10.0 12.5
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
= 5 A
V
DS
= 20 V
V
DS
= 10 V
V
DS
= 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0
25 ˚C
T
C
= 125 ˚C
- 55 ˚C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
50
100
150
200
250
300
350
400
450
500
550
0 8 16 24 32 40
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
0.6
0.9
1.2
1.5
1.8
2.1
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 5 A
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4567DY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.
2
0.01
10
20
0.00 0.2 0.4 0.6 0.8
T
J
= 25 ˚C
T
J
= 150 ˚C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.1
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
– Temperature (°C)
V
GS(th)
Variance (V)
I
D
= 5 mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.05
0.10
0.15
0.20
0.25
2345678910
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
T
A
= 25 °C
T
A
= 125 °C
I
D
= 5 A
0
30
50
10
20
Power (W)
Time (s)
40
1100.10.010.001
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
1 ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 s
10 s
Limited by R
DS(on)*
www.vishay.com
6
Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
Vishay Siliconix
Si4567DY
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
6
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (˚C)
Power Derating, Junction-to-Foot
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150
T
C
- Case Temperature (˚C)
Power Dissipation (W)
Power Derating, Junction-to-Ambient
0.00
0.25
0.50
0.75
1.00
1.25
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power Dissipation (W)
P1-P3P4-P6P7-P9P10-P12

SI4567DY-T1-GE3

Mfr. #:
Buy SI4567DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4599DY-T1-GE3
Lifecycle:
New from this manufacturer.
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