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Document Number: 73426
S09-0393-Rev. C, 09-Mar-09
Vishay Siliconix
Si4567DY
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 thru 5 V
4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.05
0.08
0.11
0.14
0.17
0.20
04 8 1 2 1 6 20
V
GS
= 10 V
I
D
- Drain Current (A)
V
GS
= 4.5 V
R
DS(on)
- On-Resistance (mΩ)
0
2
4
6
8
10
0.0 2.5 5.0 7.5 10.0 12.5
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
I
D
= 5 A
V
DS
= 20 V
V
DS
= 10 V
V
DS
= 30 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
25 °C
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
100
200
300
400
500
600
700
800
0 8 16 24 32 40
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 2 5 5 0 7 5 100 125 150
T
J
- Junction Temperature (°C)
R
DS ( on)
- On-Resistance
(Normalized)
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 3.6 A
