SIT1618AA-22-33S-25.000000E

The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.0 Revised January 4, 2014
SiT1618
Standard Frequency, High Temperature Oscillator
Features Applications
33 standard frequencies between 7.3728 MHz and 48 MHz Industrial, medical, automotive, avionics and other high
temperature applications
Supply voltage of 1.8V or 2.5V to 3.3V
Operating temperature from -40°C to 125°C. For -55°C option, refer
to SiT8920 and SiT8921
Industrial sensors, PLC, motor servo, outdoor networking
equipment, medical video cam, asset tracking systems, etc.
Excellent total frequency stability as low as ±20 ppm
Low power consumption of 3.4 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with Time Machine II and field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Electrical Specifications
Table 1. Electrical Characteristics
[1, 2]
Parameters Symbol Min. Typ. Max. Unit Condition
Frequency Range
Output Frequency Range f 33 standard frequencies between
7.3728 MHz and 48 MHz
MHz Refer to Table 13 for the exact list of supported frequencies
Frequency Stability and Aging
Frequency Stability F_stab -20 +20 ppm Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load (15 pF ± 10%).
-25 +25 ppm
-30 +30 ppm
-50 +50 ppm
Operating Temperature Range
Operating Temperature Range
(ambient)
T_use -40 +105 °C Extended Industrial
-40 +125 °C Automotive
Supply Voltage and Current Consumption
Supply Voltage Vdd 1.62 1.8 1.98 V
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.7 3.0 3.3 V
2.97 3.3 3.63 V
2.25 3.63 V
Current Consumption Idd 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V
3.6 4.2 mA No load condition, f = 20 MHz, Vdd = 2.5V
3.4 4 mA No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current I_od 4.1 mA Vdd = 2.5V to 3.3V, OE = Low, output in high Z state.
3.8 mA Vdd = 1.8V, OE = Low, output in high Z state.
Standby Current I_std 2.6 8.5 A Vdd = 2.8V to 3.3V, ST
= Low, Output is Weakly Pulled Down
–1.45.5A Vdd = 2.5V, ST
= Low, Output is Weakly Pulled Down
–0.63.5A Vdd = 1.8V, ST
= Low, Output is Weakly Pulled Down
LVCMOS Output Characteristics
Duty Cycle DC 45 55 % All Vdds
Rise/Fall Time Tr, Tf 1.0 2.0 ns Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
1.3 2.5 ns Vdd =1.8V, 20% - 80%
1.0 3 ns Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
The Smart Timing Choice
The Smart Timing Choice
SiT1618
Standard Frequency, High Temperature Oscillator
Rev. 1.0 Page 2 of 13 www.sitime.com
Notes:
3. In OE or ST
mode, a pull-up resistor of 10 k or less is recommended if pin 1 is not externally driven.
If pin 1 needs to be left floating, use the NC option.
4. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Table 1. Electrical Characteristics
[1, 2]
(continued)
Parameters Symbol Min. Typ. Max. Unit Condition
Input Characteristics
Input High Voltage VIH 70% Vdd Pin 1, OE or ST
Input Low Voltage VIL 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST logic high
2––M Pin 1, ST
logic low
Startup and Resume Timing
Startup Time T_start 5 ms Measured from the time Vdd reaches 90% of final value
Enable/Disable Time T_oe 162 ns f = 48 MHz. For other frequencies, T_oe = 100 ns + 3 * clock
periods
Resume Time T_resume 5 ms Measured from the time ST pin crosses 50% threshold
Jitter
RMS Period Jitter T_jitt 1.6 2.5 ps f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
1.9 4 ps f = 20 MHz, Vdd = 1.8V
Peak-to-peak Period Jitter T_pk 12 20 ps f = 20 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
14 30 ps f = 20 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj 0.5 0.8 ps f = 40 MHz,
Integration bandwidth = 900 kHz to 7.5 MHz
1.3 2 ps f = 40 MHz,
Integration bandwidth = 12 kHz to 20 MHz
Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at
25 °C temperature.
Table 2. Pin Description
Pin Symbol Functionality
1OE/ ST/
NC
Output
Enable
H
[3]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H
[3]
: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
No Connect
Any voltage between 0 and Vdd or Open
[2]
: Specified frequency
output. Pin 1 has no function.
2 GND Power Electrical ground
[4]
3 OUT Output Oscillator output
4 VDD Power Power supply voltage
[4]
1 4
OE/ST/NC
VDD
32
GND
OUT
Figure 1. Pin Assignments
Top View
The Smart Timing Choice
The Smart Timing Choice
SiT1618
Standard Frequency, High Temperature Oscillator
Rev. 1.0 Page 3 of 13 www.sitime.com
N
Note:
6. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Note:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
Vdd -0.5 4 V
Electrostatic Discharge –2000V
Soldering Temperature (follow standard Pb free soldering guidelines) 260 °C
Junction Temperature
[5]
150 °C
Note:
5. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[6]
Package
JA, 4 Layer Board
(°C/W)
JA, 2 Layer Board
(°C/W)
JC, Bottom
(°C/W)
7050 142 273 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
2016 152 252 36
Table 5. Maximum Operating Junction Temperature
[7]
Max Operating Temperature (ambient) Maximum Operating Junction Temperature
105°C 115°C
125°C 135°C
Table 6. Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C

SIT1618AA-22-33S-25.000000E

Mfr. #:
Manufacturer:
Description:
MEMS OSC XO 25.0000MHZ LVCMOS LV
Lifecycle:
New from this manufacturer.
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