SIT1618AA-22-33S-25.000000E

The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.1 www.sitime.com
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign par-
ticles and improves long term aging and reliability
World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison
[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal process, which eliminates foreign parti-
cles and improves long term aging and reliability
Inherently better immunity of electrostatically driven
MEMS resonator
Figure 2. Aging Comparison
[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
Internal differential architecture for best common mode
noise rejection
Electrostatically driven MEMS resonator is more immune
to EMS
Figure 3. Electro Magnetic Susceptibility (EMS)
[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
On-chip regulators and internal differential architecture for
common mode noise rejection
Best analog CMOS design expertise
Figure 4. Power Supply Noise Rejection
[4]
Mean Time Between Failure (Million Hours)
14
16
28
38
500
0
200 400
600
Pericom
TXC
Epson
IDT (Fox)
SiTime
SiTime
20X Better
1.5
3.5
3.0
8.0
0
2
4
6
8
10
1-Year
10-Year
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
Aging (±PPM)
SiTime
2X Better
- 39
- 40
- 42
- 43
- 45
- 73
- 90
- 80
- 70
- 60
- 50
- 40
- 30
Kyocera
Epson
TXC CW SiLabs SiTime
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
A
v
e
r
a
g
e
S
p
u
r
s
(
d
B
)
SiTime
54X Better
0.0
1.0
2.0
3.0
4.0
5.0
10 100 1,000 10,000
A
d
d
i
t
i
v
e
I
n
t
e
g
r
a
t
e
d
P
h
a
s
e
J
i
t
t
e
r
p
e
r
m
V
p
-
p
I
n
j
e
c
t
e
d
N
o
i
s
e
(
p
s
/
m
v
)
Power Supply Noise Frequency (kHz)
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
SiTime
SiTime
3X Better
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.1 www.sitime.com
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
design
Figure 5. Vibration Robustness
[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
design
Figure 6. Shock Robustness
[6]
Vibration Sensitivity (ppb/g)
0.10
1.00
10.00
100.00
10 100 1000
Vibration Frequency (Hz)
Vibration Sensitivity vs. Frequency
SiTime TXC Epson Connor Winfield Kyocera SiLabs
SiTime
Up to 30x
Better
14.3
12.6
3.9
2.9
2.5
0.6
0
2
4
6
8
10
12
14
16
K
y
ocer
a
E
p
son TXC CW SiLab
s
SiTime
Differential XO Shock Robustness - 500 g
SiTime
Up to 25x
Better
Peak Frequency Deviation (PPM)
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5.
Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
The Smart Timing Choice
The Smart Timing Choice
Document Feedback Form
Feedback Form Rev. 1.0 www.sitime.com
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below to productsupport@sitime.com.
1. Does the Electrical Characteristics table provide complete information? Yes No
If No, what parameters are missing?
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3. Is there any application specific information that you would like to see in this document? (Check all that apply)
EMI Termination recommendations Shock and vibration performance Other
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SIT1618AA-22-33S-25.000000E

Mfr. #:
Manufacturer:
Description:
MEMS OSC XO 25.0000MHZ LVCMOS LV
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