10. When CA parity is enabled for I
DD2N
, current changes by approximately +7%.
11. I
PP3N
test and limit is applicable for all I
DD2x
, I
DD3x
, I
DD4x
, I
DD6x
, and I
DD8
conditions; that
is, testing I
PP3N
should satisfy the I
PP
s for the noted I
DD
tests.
12. When additive latency is enabled for I
DD3N
, current changes by approximately +0.6%.
13. When additive latency is enabled for I
DD4R
, current changes by approximately +5%.
14. When read DBI is enabled for I
DD4R
, current changes by approximately 0%.
15. When additive latency is enabled for I
DD4W
, current changes by approximately +4%.
16. When write DBI is enabled for I
DD4W
, current changes by approximately 0%.
17. When write CRC is enabled for I
DD4W
, current changes by approximately –3%.
18. When CA parity is enabled for I
DD4W
, current changes by approximately +12%.
19. When 2X REF is enabled for I
DD5R
, current changes by approximately –14%.
20. When 4X REF is enabled for I
DD5R
, current changes by approximately –33%.
21. Applicable for MR2 settings A7 = 0 and A6 = 0; manual mode with normal temperature
range of operation (0–85°C).
22. Applicable for MR2 settings A7 = 1 and A6 = 0; manual mode with extended tempera-
ture range of operation (0–95°C).
23. Applicable for MR2 settings A7 = 0 and A6 = 1; manual mode with reduced temperature
range of operation (0–45°C).
24. I
DD6R
and I
DD6A
values are typical.
Table 10: x16 I
DD
, I
PP
, and I
DDQ
Current Limits – Rev. D
Symbol DDR4-2133
1
DDR4-2400 DDR4-2666 DDR4-2933 DDR4-3200 Unit Notes
I
DD0
: One bank ACTIVATE-to-
PRECHARGE current
90 96 102 108 114 mA 2, 3, 4
I
PP0
: One bank ACTIVATE-to-
PRECHARGE I
PP
current
6 6 6 6 6 mA
I
DD1
: One bank ACTIVATE-to-
READ-to-PRECHARGE current
114 120 126 132 138 mA 3, 4, 5
I
DD2N
: Precharge standby cur-
rent
66 68 70 72 74 mA 4, 6, 7,
8, 9, 10,
11
I
DD2NT
: Precharge standby
ODT current
90 100 100 110 120 mA 4, 11
I
DD2P
: Precharge power-down
current
50 50 50 50 50 mA 4, 11
I
DD2Q
: Precharge quiet stand-
by current
60 60 60 60 60 mA 4, 11
I
DD3N
: Active standby current 90 96 102 108 112 mA 4, 11
I
PP3N
: Active standby I
PP
cur-
rent
6 6 6 6 6 mA
I
DD3P
: Active power-down cur-
rent
70 74 78 82 86 mA 4, 11
I
DD4R
: Burst read current 250 270 292 314 336 mA 4, 14,
13, 11
I
DD4W
: Burst write current 250 264 284 300 320 mA 4, 11,
15, 16,
17, 18
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Current Specifications – Limits
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.