Electrical Specifications – Leakages
Table 3: Input and Output Leakages
Symbol Parameter Min Max Units Notes
I
I
Input leakage current
Any input 0V ≤ V
IN
≤ V
DD
,
V
REF
pin 0V ≤ V
IN
≤ 1.1V
(All other pins not under test = 0V)
–4 4 µA 1
I
VREF
V
REF
supply leakage current
V
REFDQ
= V
DD
/2 or V
REFCA
= V
DD
/2
(All other pins not under test = 0V)
–4 4 µA 2
I
ZQ
Input leakage on ZQ pin –50 10 µA
I
TEN
Input leakage on TEN pin –12 20 µA
I
OZPD
Output leakage: V
OUT
= V
DDQ
– 10 µA 3
I
OZPU
Output leakage: V
OUT
= V
SSQ
–50 – µA 3, 4
Notes:
1. Any input 0V < Vin < 1.1V
2. V
REFCA
= V
DD
/2, V
DD
at valid level.
3. DQs are disabled.
4. ODT is disabled with the ODT input HIGH.
Temperature and Thermal Impedance
It is imperative that the DDR4 SDRAM device’s temperature specifications, shown in
the following table, be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances cor-
rectly. The thermal impedances listed in Table 5 (page 9) apply to the current die re-
vision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron
technical note TN-00-08, “Thermal Applications,” prior to using the values listed in the
thermal impedance table. For designs that are expected to last several years and require
the flexibility to use several DRAM die shrinks, consider using final target theta values
(rather than existing values) to account for increased thermal impedances from the die
size reduction.
The DDR4 SDRAM device’s safe junction temperature range can be maintained when
the T
C
specification is not exceeded. In applications where the device’s ambient tem-
perature is too high, use of forced air and/or heat sinks may be required to satisfy the
case temperature specifications.
16Gb: x16 TwinDie Single Rank DDR4 SDRAM
Electrical Specifications – Leakages
CCMTD-1725822587-9947
16gb_x16_1cs_TwinDie.pdf - Rev. G 06/18 EN
8
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