DocID027211 Rev 3 3/13
STF100N6F7 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 60 V
V
GS
Gate-source voltage ±20 V
I
D
Drain current (continuous) at T
C
= 25 °C 46
(1)
1. Limited by package
A
I
D
Drain current (continuous) at T
C
= 100 °C 33
(1)
A
I
DM
(2)
2. Pulse width is limited by safe operating area
Drain current (pulsed) 184 A
P
TOT
Total dissipation at T
C
= 25 °C 25 W
E
AS
(3)
3. Starting T
J
= 25 °C, I
D
= 20 A, V
DD
= 30 V
Single pulse avalanche energy 200 mJ
dV/dt
(4)
4. I
SD
= 46 A; di/dt = 600 A/µs; V
DD
= 48 V; T
j
< Tjmax
Drain-body diode dynamic dV/dt ruggedness 6 V/ns
V
ISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; T
C
= 25 °C)
2500 V
T
j
Operating junction temperature
-55 to 175 °C
T
stg
Storage temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 6 °C/W
R
thj-amb
Thermal resistance junction-ambient 62.5 °C/W
