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STF100N6F7

P1-P3P4-P6P7-P9P10-P12P13-P13
Electrical characteristics STF100N6F7
4/13 DocID027211 Rev 3
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA 60 V
I
DSS
Zero gate voltage
Drain current
V
GS
= 0 V, V
DS
= 60 V 1 µA
V
GS
= 0 V, V
DS
= 60 V,
T
J
=125°C
100 µA
I
GSS
Gate-source leakage
current
V
DS
= 0 V, V
GS
= 20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 23 A 4.6 5.6 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
GS
= 0 V, V
DS
= 25 V,
f = 1 MHz
- 1980 - pF
C
oss
Output capacitance - 970 - pF
C
rss
Reverse transfer
capacitance
-86-pF
Q
g
Total gate charge
V
DD
= 30 V, I
D
= 46 A,
V
GS
=10V
-30-nC
Q
gs
Gate-source charge - 12.6 - nC
Q
gd
Gate-drain charge - 5.9 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
=30V, I
D
=23A
R
G
=4.7Ω, V
GS
=10V
- 21.6 - ns
t
r
Rise time - 55.5 - ns
t
d(off)
Turn-off-delay time - 28.6 - ns
t
f
Fall time - 15 - ns
DocID027211 Rev 3 5/13
STF100N6F7 Electrical characteristics
13
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD
(1)
1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage V
GS
= 0 V, I
SD
= 46 A - 1.2 V
t
rr
Reverse recovery time
I
SD
= 46 A, di/dt = 100 A/µs,
V
DD
= 48 V
-48.4 ns
Q
rr
Reverse recovery charge - 47 nC
I
RRM
Reverse recovery current - 2.0 A
Electrical characteristics STF100N6F7
6/13 DocID027211 Rev 3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
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P1-P3P4-P6P7-P9P10-P12P13-P13

STF100N6F7

Mfr. #:
Buy STF100N6F7
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 60 V, 4.6 mOhm typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package
Lifecycle:
New from this manufacturer.
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