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STF100N6F7
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
DocID02721
1 Rev 3
7/13
STF100N6
F7
Electri
cal character
istics
13
Figure 8. Cap
acit
ance variations
Figure 9. Norma
lized gate threshold
volta
ge vs
temperature
Figure 10.
Norm
alized on-
resistance vs
temperature
Figure 1
1. Source-drain diode forward
character
istics
Figure 12
. Norm
alized V
(BR)DSS
vs temper
ature
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Test circu
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STF100N6F7
8/13
DocID027
21
1 Rev 3
3
T
est circuits
Figure 13. S
witchin
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st circuit f
or
resist
ive load
Figure 1
4. Gate
charge
test circu
it
Figur
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est
circuit f
or induc
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switching and diode recovery times
Figure 16. Unclamped inductive load tes
t circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time wa
veform
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DocID02721
1 Rev 3
9/13
STF100N6
F7
Package me
chanic
al data
13
4
Package mechan
ical dat
a
In orde
r to meet e
nvironm
ental requi
rements, ST offers th
ese de
vices
in different gr
ades of
ECOP
ACK
®
packages
, dependi
ng on th
eir level
of env
ironmental com
pliance
. ECOP
ACK
®
speci
fication
s, grade
definitio
ns and pr
oduct
status are a
vailable a
t:
www
.st.com
.
ECOP
ACK
®
is an
ST tra
demark.
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STF100N6F7
Mfr. #:
Buy STF100N6F7
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 60 V, 4.6 mOhm typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package
Lifecycle:
New from this manufacturer.
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STF100N6F7