N01S818HAT22IT

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Figure 10. DUAL Read Mode Register Sequence (RDMR)
C[3:0] = 05hNotes:
CS
Instruction
0321
SCK
C3 C2 H L
MSB
Mode Bits
SIO[1:0]
45
LHC1 C0
67
Figure 11. QUAD Read Mode Register Sequence (RDMR)
C[1:0] = 05hNotes:
CS
Instruction
0321
SCK
C1 C0 H L
MSB
Mode Bits
SIO[3:0]
Write Mode Register (WRMR)
This instruction provides the ability to write the mode
register. The Write Mode Register operation is executed by
driving CS
low, then sending the WRMR instruction to the
device. Immediately after the instruction, the data is driven
to the device on the SO (SIO0-3) pin(s). To complete the
operation, drive CS high to terminate the register write.
Figure 12. SPI Write Mode Register Sequence
CS
Instruction
SI
04325169810711
SCK
7 6543210
HighZ
Mode Register Data In
SO
00 000 10
12 13 14 15
0
Figure 13. DUAL Write Mode Register Sequence
C[3:0] = 01hNotes:
CS
Instruction
0321
SCK
C3 C2 H L
MSB
Mode Bits
SIO[1:0]
45
LHC1 C0
67
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Figure 14. QUAD Write Mode Register Sequence
CS
Instruction
0321
SCK
C1 C0 H L
C[1:0] = 01hNotes:
MSB
Mode Bits
SIO[3:0]
Table 5. MODE REGISTER
Bit Function
0 Hold Function
1 = Hold function disabled
0 = Hold function enabled (Default)
1 Reserved
2 Reserved
3 Reserved
4 Reserved
5 Reserved
6
Operating Mode
Bit 7 Bit 6
0 0 = Word Mode
1 0 = Page Mode
0 1 = Burst Mode (Default)
1 1 = Reserved
7
Power-Up State
The serial SRAM enters a know state at power-up time.
The device is in low-power standby state with CS
= 1. A low
level on CS
is required to enter a active state.
Table 6. ABSOLUTE MAXIMUM RATINGS
Item Symbol Rating Units
Voltage on any pin relative to V
SS
V
IN,OUT
–0.3 to V
CC
+0.3 V
Voltage on V
CC
Supply Relative to V
SS
V
CC
–0.3 to 5.5 V
Power Dissipation P
D
500 mW
Storage Temperature T
STG
–40 to 125 °C
Operating Temperature T
A
-40 to +85 °C
Soldering Temperature and Time T
SOLDER
260°C, 10 sec °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 7. OPERATING CHARACTERISTICS (OVER SPECIFIED TEMPERATURE RANGE)
Item Symbol Test Conditions Min Typ (Note 1) Max Units
Supply Voltage V
CC
1.7 2.2 V
Data Retention Voltage (Note 2) V
DR
1.0 V
Input High Voltage V
IH
0.7 V
CC
V
CC
+ 0.3
Input Low Voltage V
IL
0.3 0.2 V
CC
V
Output High Voltage V
OH
I
OH
= 0.4 mA V
CC
0.2 V
Output Low Voltage V
OL
I
OL
= 1 mA 0.2 V
Input Leakage Current I
LI
CS = V
CC
, V
IN
= 0 to V
CC
1.0
mA
Output Leakage Current I
LO
CS = V
CC
, V
OUT
= 0 to V
CC
1.0
mA
Operating Current I
CC
f = 20 MHz, I
OUT
= 0, SPI / DUAL 10
mA
f = 20 MHz, I
OUT
= 0, QUAD 10
Standby Current I
SB
CS = V
CC
, V
IN
= V
SS
or V
CC
1 5
mA
1. Typical values are measured at V
CC
= V
CC
Typ., T
A
= 25°C and are not 100% tested.
2. Typical lower limit of VCC when data will be retained in the memory array, not 100% tested.
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Table 8. CAPACITANCE (Note 3)
Item Symbol Test Conditions Min Max Units
Input Capacitance C
IN
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C 7 pF
I/O Capacitance C
I/O
V
IN
= 0 V, f = 1 MHz, T
A
= 25°C 7 pF
3. These parameters are verified in device characterization and are not 100% tested.
Table 9. TIMING TEST CONDITIONS
Item Value
Input Pulse Level 0.1 V
CC
to 0.9 V
CC
Input Rise and Fall Time 5 ns
Input and Output Timing Reference Levels 0.5 V
CC
Output Load CL = 30 pF
Operating Temperature 40 to +85°C
Table 10. TIMING
Item Symbol Min Max Units
Clock Frequency f
CLK
20 MHz
Clock Period t
CLK
50 ns
Clock Rise Time t
R
20 ns
Clock Fall Time t
F
20 ns
Clock High Time t
HI
25 ns
Clock Low Time t
LO
25 ns
Clock Delay Time t
CLD
25 ns
CS Setup Time t
CSS
25 ns
CS Hold Time t
CSH
50 ns
CS Disable Time t
CSD
25 ns
SCK to CS t
SCS
5 ns
Data Setup Time t
SU
10 ns
Data Hold Time t
HD
10 ns
Output Valid From Clock Low t
V
25 ns
Output Hold Time t
HO
0 ns
Output Disable Time t
DIS
20 ns
HOLD Setup Time t
HS
10 ns
HOLD Hold Time t
HH
10 ns
HOLD Low to Output High-Z t
HZ
10 ns
HOLD High to Output Valid t
HV
50 ns

N01S818HAT22IT

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
SRAM 1MB, 1.8V, HOLD FUNCT
Lifecycle:
New from this manufacturer.
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