©2002 Fairchild Semiconductor Corporation Rev. B January 2002
ISL9N302AP3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
Switching Characteristics
(V
GS
= 10V)
Unclamped Inductive Switching
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250
µ
A, V
GS
= 0V 30 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 25V - - 1
µ
A
V
GS
= 0V T
C
= 150
o
- - 250
I
GSS
Gate to Source Leakage Current V
GS
=
±
20V - -
±
100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250
µ
A1-3V
r
DS(ON)
Drain to Source On Resistance
I
D
= 75A, V
GS
= 10V - 0.0019 0.0025
Ω
I
D
= 75A, V
GS
= 4.5V - 0.0027 0.0033
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
- 11000 - pF
C
OSS
Output Capacitance - 2000 - pF
C
RSS
Reverse Transfer Capacitance - 900 - pF
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 75A
I
g
= 1.0mA
200 300 nC
Q
g(5)
Total Gate Charge at 5V V
GS
= 0V to 5V - 110 165 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 1V - 12 18 nC
Q
gs
Gate to Source Gate Charge - 25 - nC
Q
gd
Gate to Drain “Miller” Charge - 31 - nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 28A
V
GS
= 4.5V, R
GS
= 1.5
Ω
- - 224 ns
t
d(ON)
Turn-On Delay Time - 29 - ns
t
r
Rise Time - 120 - ns
t
d(OFF)
Turn-Off Delay Time - 45 - ns
t
f
Fall Time - 34 - ns
t
OFF
Turn-Off Time - - 119 ns
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 28A
V
GS
= 10V, R
GS
= 1.5
Ω
- - 204 ns
t
d(ON)
Turn-On Delay Time - 16 - ns
t
r
Rise Time - 120 - ns
t
d(OFF)
Turn-Off Delay Time - 70 - ns
t
f
Fall Time - 30 - ns
t
OFF
Turn-Off Time - - 150 ns
t
AV
Avalanche Time I
D
= 7.2A, L = 3.0mH 480 - -
µ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 75A - - 1.25 V
I
SD
= 40A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 75A, dI
SD
/dt = 100A/
µ
s- - 42 ns
Q
RR
Reverse Recovered Charge I
SD
= 75A, dI
SD
/dt = 100A/
µ
s- - 34 nC
