©2002 Fairchild Semiconductor Corporation Rev. B January 2002
ISL9N302AP3
Figure 5. Transfer Characteristics Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic (Continued)
0
25
50
75
100
125
150
1.5 2.0 2.5 3.0 3.5
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= -55
o
C
T
J
= 175
o
C
T
J
= 25
o
C
0
25
50
75
100
125
150
0.5 1.0 1.5 2.0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3V
0
0
2
4
6
8
10
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 75A
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
I
D
= 10A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-80 -40 0 40 80 120 160 200
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
= 75A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-80 -40 0 40 80 120 160 200
NORMALIZED GATE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250µA
THRESHOLD VOLTAGE
0.9
1.0
1.1
1.2
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250µA
