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NCV8402ADDR2G

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 3
1 Publication Order Number:
NCV8402D/D
NCV8402D, NCV8402AD
Dual Self-Protected
Low-Side Driver with
Temperature and Current
Limit
NCV8402D/AD is a dual protected Low−Side Smart Discrete device.
The protection features include overcurrent, overtemperature, ESD and
integrated Drain−to−Gate clamping for overvoltage protection. This
device offers protection and is suitable for harsh automotive
environments.
Features
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
www.onsemi.com
*Max current limit value is dependent on input
condition.
SO−8
CASE 751
STYLE 11
MARKING DIAGRAM
V
(BR)DSS
(Clamped)
R
DS(ON)
TYP
I
D
MAX
42 V
165 mW @ 10 V
2.0 A*
xxxxxx = V8402D or 8402AD
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV8402DDR2G
SOIC−8
(Pb−Free)
2500/Tape & Ree
l
1
8
xxxxxx
ALYW
G
1
8
PIN ASSIGNMENT
1
8
Source 1 Drain 1
Gate 1 Drain 1
Source 2 Drain 2
Gate 2 Drain 2
NCV8402ADDR2G
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
NCV8402D, NCV8402AD
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 V
Drain−to−Gate Voltage Internally Clamped (R
G
= 1.0 MW)
V
DGR
42 V
Gate−to−Source Voltage V
GS
"14 V
Continuous Drain Current I
D
Internally Limited
Power Dissipation @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
P
D
0.8
1.62
W
Maximum Continuous Drain Current @ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
I
D
2.02
2.88
A
Thermal Resistance Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
R
q
JA
R
q
JA
157
77
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 32 V, V
G
= 5.0 V, I
PK
= 1.0 A, L = 300 mH, R
G(ext)
= 25 W)
E
AS
150 mJ
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0 W, R
L
= 9.0 W, t
d
= 400 ms)
V
LD
55 V
Operating Junction and Storage Temperature T
J
, T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.).
2. Surface−mounted onto 1″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.).
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
−
+
−
Figure 1. Voltage and Current Convention
NCV8402D, NCV8402AD
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C
V
(BR)DSS
42 46 55
V
V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C
(Note 5)
40 45 55
Zero Gate Voltage Drain Current
V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C
I
DSS
0.25 4.0
mA
V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C
(Note 5)
1.1 20
Gate Input Current V
DS
= 0 V, V
GS
= 5.0 V I
GSSF
50 100
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 150 mA
V
GS(th)
1.3 1.8 2.2 V
Gate Threshold Temperature Coefficient V
GS(th)
/T
J
4.0 6.0 −mV/°C
Static Drain−to−Source On−Resistance
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 25°C
R
DS(on)
165 200
mW
V
GS
= 10 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
305 400
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 25°C
195 230
V
GS
= 5.0 V, I
D
= 1.7 A, T
J
= 150°C
(Note 5)
360 460
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 25°C
190 230
V
GS
= 5.0 V, I
D
= 0.5 A, T
J
= 150°C
(Note 5)
350 460
Source−Drain Forward On Voltage V
GS
= 0 V, I
S
= 7.0 A V
SD
1.0 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time (10% V
IN
to 90% I
D
)
V
GS
= 10 V, V
DD
= 12 V,
I
D
= 2.5 A, R
L
= 4.7 W
td(on)
25 30
ms
Turn−On Rise Time (10% I
D
to 90% I
D
) t
rise
120 200
ms
Turn−Off Delay Time (90% V
IN
to 10% I
D
)
td(off)
20 25
ms
Turn−Off Fall Time (90% I
D
to 10% I
D
) t
fall
50 70
ms
Slew−Rate ON (70% V
DS
to 50% V
DD
) −dV
DS
/dt
ON
0.8 1.2
V/ms
Slew−Rate OFF (50% V
DS
to 70% V
DD
) dV
DS
/dt
OFF
0.3 0.5
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 4)
Current Limit
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 25°C
I
LIM
3.7 4.3 5.0
A
V
DS
= 10 V, V
GS
= 5.0 V, T
J
= 150°C
(Note 5)
2.3 3.0 3.7
V
DS
= 10 V, V
GS
= 10 V, T
J
= 25°C
4.2 4.8 5.4
V
DS
= 10 V, V
GS
= 10 V, T
J
= 150°C
(Note 5)
2.7 3.6 4.5
Temperature Limit (Turn−off)
V
GS
= 5.0 V (Note 5)
T
LIM(off)
150 175 200
°C
Thermal Hysteresis
V
GS
= 5.0 V
DT
LIM(on)
15
Temperature Limit (Turn−off)
V
GS
= 10 V (Note 5)
T
LIM(off)
150 165 185
Thermal Hysteresis
V
GS
= 10 V
DT
LIM(on)
15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
V
GS
= 5 V I
D
= 1.0 A
I
GON
50
mA
V
GS
= 10 V I
D
= 1.0 A
400
Current Limit Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GCL
0.05
mA
V
GS
= 10 V, V
DS
= 10 V
0.4
Thermal Limit Fault Gate Input Current
V
GS
= 5 V, V
DS
= 10 V
I
GTL
0.15
mA
V
GS
= 10 V, V
DS
= 10 V
0.7
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
4000
V
Machine Model (MM) 400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
P1-P3P4-P6P7-P9P10-P11

NCV8402ADDR2G

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MOSFET 42V2A
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