NCV8402D, NCV8402AD
www.onsemi.com
7
TYPICAL PERFORMANCE CURVES
0.6
0.7
0.8
0.9
1
1.1
1.2
−40 −20 0 20 40 60 80 100 120 140
Figure 14. Normalized Threshold Voltage vs.
Temperature
T (°C)
GS(th)
I
D
= 150 mA
V
GS
= V
DS
0.5
0.6
0.7
0.8
0.9
1
1234567891
Figure 15. Source−Drain Diode Forward
Characteristics
I
S
(A)
V
SD
(V)
25°C
100°C
150°C
−40°C
V
GS
= 0 V
0
50
100
150
200
345678910
t
d(off)
t
d(on)
t
f
t
r
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
V
GS
(V)
m
I
D
= 2.5 A
V
DD
= 12 V
R
G
= 0 W
0
0.2
0.4
0.6
0.8
1
34567891
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
V
GS
(V)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
I
D
= 2.5 A
V
DD
= 12 V
R
G
= 0 W
−dV
DS
/d
t(on)
dV
DS
/d
t(off)
0
25
50
75
100
0 400 800 1200 1600 2000
m
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
R
G
(W)
t
f
, (V
GS
= 10 V) t
f
, (V
GS
= 5 V)
t
d(off)
, (V
GS
= 10 V)
t
r
, (V
GS
= 5 V)
t
d(off)
, (V
GS
= 5 V)
t
r
, (V
GS
= 10 V)
t
d(on)
, (V
GS
= 5 V)
t
d(on)
, (V
GS
= 10 V)
I
D
= 2.5 A
V
DD
= 12 V
0
0.2
0.4
0.6
0.8
1
0 500 1000 1500 200
dV
DS
/d
t(off)
, V
GS
= 5 V
−dV
DS
/d
t(on)
, V
GS
= 10 V
−dV
DS
/d
t(on)
, V
GS
= 5 V
dV
DS
/d
t(off)
, V
GS
= 10 V
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
R
G
(W)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
I
D
= 2.5 A
V
DD
= 12 V
