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NCV8402ADDR2G

P1-P3P4-P6P7-P9P10-P11
NCV8402D, NCV8402AD
www.onsemi.com
4
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
NCV8402D, NCV8402AD
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
1
10
10 100
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
L (mH)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
1000
10 1
00
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
0.1
1
10
110
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
TIME IN CLAMP (ms)
I
L(max)
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
10
100
1000
11
0
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
V
DS
(V)
I
D
(A)
Figure 6. On−state Output Characteristics
V
GS
= 2.5 V
3 V
4 V
5 V
6 V
8 V
10 V
T
A
= 25°C
0
1
2
3
4
5
1234
5
V
DS
= 10 V
25°C
100°C
150°C
−40°C
I
D
(A)
V
GS
(V)
Figure 7. Transfer Characteristics
0
1
2
3
4
5
6
7
8
012345
3.5 V
NCV8402D, NCV8402AD
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
0
100
200
300
400
45678910
Figure 8. R
DS(on)
vs. Gate−Source Voltage
V
GS
(V)
R
DS(on)
(mW)
150°C, I
D
= 0.5 A
150°C, I
D
= 1.7 A
100°C, I
D
= 0.5 A
100°C, I
D
= 1.7 A
25°C, I
D
= 0.5 A
25°C, I
D
= 1.7 A
−40°C, I
D
= 0.5 A
−40°C, I
D
= 1.7 A
50
100
150
200
250
300
350
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
150°C, V
GS
= 10 V
150°C, V
GS
= 5 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
Figure 9. R
DS(on)
vs. Drain Current
I
D
(A)
R
DS(on)
(mW)
0.5
0.75
1
1.25
1.5
1.75
2
−40 −20 0 20 40 60 80 100 120 140
V
GS
= 5 V
V
GS
= 10 V
I
D
= 1.7 A
Figure 10. Normalized R
DS(on)
vs. Temperature
T (°C)
R
DS(on)
(NORMALIZED)
2
3
4
5
6
7
8
5678910
25°C
100°C
150°C
−40°C
Figure 11. Current Limit vs. Gate−Source
Voltage
V
GS
(V)
I
LIM
(A)
V
DS
= 10 V
2
3
4
5
6
7
8
−40 −20 0 20 40 60 80 100 120 140
Figure 12. Current Limit vs. Junction
Temperature
T
J
(°C)
I
LIM
(A)
V
DS
= 10 V
V
GS
= 5 V
V
GS
= 10 V
0.0001
0.001
0.01
0.1
1
10
10 15 20 25 30 35 40
Figure 13. Drain−to−Source Leakage Current
V
DS
(V)
I
DSS
(mA)
V
GS
= 0 V
25°C
100°C
150°C
−40°C
P1-P3P4-P6P7-P9P10-P11

NCV8402ADDR2G

Mfr. #:
Buy NCV8402ADDR2G
Manufacturer:
ON Semiconductor
Description:
MOSFET 42V2A
Lifecycle:
New from this manufacturer.
Delivery:
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