IPG20N10S4L35AATMA1

P1-P3 P4-P6 P7-P9

IPG20N10S4L-35A

OptiMOS™-T2 Power-Transistor

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

one channel active

I

D

T

C

=25 °C, V

GS

=10 V

1)

20 A

T

C

=100 °C,

V

GS

=10 V

2)

17

Pulsed drain current

2)

one channel active

I

D,pulse

-

80

Avalanche energy, single pulse

2, 4)

E

AS

I

D

=10A

60 mJ

Avalanche current, single pulse

4)

I

AS

-

15 A

Gate source voltage

V

GS

-±16V

Power dissipation

one channel active

P

tot

T

C

=25 °C

43 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

100 V

R

DS(on),max

4)

35

mΩ

I

D

20 A

Product Summary

Type Package Marking

IPG20N10S4L-35A PG-TDSON-8-10 4N10L35

PG-TDSON-8-10

R

ev. 1.0 page 1 2013-03-04

IPG20N10S4L-35A

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

---3.5K/W

SMD version, device on PCB

R

thJA

minimal footprint - 100 -

6 cm

2

cooling area

3)

-60-

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

100 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

= 16µA

1.1 1.6 2.1

Zero gate voltage drain current

4)

I

DSS

V

DS

=100 V, V

GS

=0 V,

T

j

=25 °C

-0.011µA

V

DS

=100 V, V

GS

=0 V,

T

j

=125 °C

2)

- 1 100

Gate-source leakage current

4)

I

GSS

V

GS

=16 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

4)

R

DS(on)

V

GS

=4.5 V, I

D

=10 A

-3845

mΩ

V

GS

=10 V, I

D

=17 A

-2935

Values

R

ev. 1.0 page 2 2013-03-04

IPG20N10S4L-35A

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

4)

C

iss

- 850 1105 pF

Output capacitance

4)

C

oss

- 285 370

Reverse transfer capacitance

4)

C

rss

-3060

Turn-on delay time

t

d(on)

-3-ns

Rise time

t

r

-2-

Turn-off delay time

t

d(off)

-18-

Fall time

t

f

-13-

Gate Char

g

e Characteristics

2, 4)

Gate to source charge

Q

gs

-2.93.8nC

Gate to drain charge

Q

gd

-3.26.4

Gate charge total

Q

g

- 13.4 17.4

Gate plateau voltage

V

plateau

-3.5-V

Reverse Diode

Diode continous forward current

2)

one channel active

I

S

--20A

Diode pulse current

2)

one channel active

I

S,pulse

--80

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=17 A,

T

j

=25 °C

-1.01.3V

Reverse recovery time

2)

t

rr

V

R

=50 V, I

F

=I

S

,

di

F

/dt=100 A/µs

-50-ns

Reverse recovery charge

2, 4)

Q

rr

-75-nC

4)

Per channel

2)

Specified by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 3.5K/W the chip is able to carry 24A at 25°C.

T

C

=25 °C

Values

V

GS

=0 V, V

DS

=25 V,

f=1 MHz

V

DD

=50 V, V

GS

=10 V,

I

D

=20 A, R

G

=11 Ω

V

DD

=80 V, I

D

=20 A,

V

GS

=0 to 10 V

R

ev. 1.0 page 3 2013-03-04

P1-P3 P4-P6 P7-P9

IPG20N10S4L35AATMA1

Mfr. #:

Buy IPG20N10S4L35AATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CHANNEL_100+

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

IPG20N10S4L35AATMA1