IPG20N10S4L35AATMA1

IPG20N10S4L-35A
13 Avalanche energy
5)
14 Drain-source breakdown voltage
E
AS
=f(T
j
), I
D
=10A V
BR(DSS)
=f(T
j
); I
D
=1mA
15 Typ. gate charge
5)
16 Gate charge waveforms
V
GS
=f(Q
gate
); I
D
=20A pulsed
parameter: V
DD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
90
95
100
105
110
115
-60 -20 20 60 100 140 180
V
BR(DSS)
[V]
T
j
[°C]
20V
80 V
0
2
4
6
8
10
12
03691215
V
GS
[V]
Q
gate
[nC]
0
10
20
30
40
50
60
25 50 75 100 125 150 175
E
AS
[mJ]
T
j
[°C]
R
ev. 1.0 page 7 2013-03-04
IPG20N10S4L-35A
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2013
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
R
ev. 1.0 page 8 2013-03-04
IPG20N10S4L-35A
Revision History
Version
Revision 1.0
Date
04.03.2013
Changes
Final Data Sheet
R
ev. 1.0 page 9 2013-03-04

IPG20N10S4L35AATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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