OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTGD4167CT1G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2008
December, 2008 − Rev. 1
1 Publication Order Number:
NTGD4167C/D
NTGD4167C
Power MOSFET
Complementary, 30 V, +2.9/−2.2 A,
TSOP−6 Dual
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size (3 x 3 mm) Dual TSOP−6 Package
• Leading Edge Trench Technology for Low On Resistance
• Reduced Gate Charge to Improve Switching Response
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Conversion Circuits
• Load/Power Switching with Level Shift
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage (N−Ch & P−Ch) V
GS
±12 V
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
2.6
1.9
A
t ≤ 5 s T
A
= 25°C 2.9
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
−1.9
−1.4
A
t ≤ 5 s T
A
= 25°C −2.2
Power Dissipation
(Note 1)
Steady State
T
A
= 25°C P
D
0.9
W
t ≤ 5 s 1.1
Pulsed Drain
Current
N−Ch t
p
= 10 ms
I
DM
8.6
A
P−Ch −6.3
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
±0.9 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
140 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
R
q
JA
110 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
1
2
3
6
5
4
G1
S2
G2
D1
S1
D2
http://onsemi.com
G2
S2
P−CHANNEL MOSFET
D2
TA = Specific Device Code
M = Date Code
G = Pb−Free Package
TSOP−6
CASE 318G
STYLE 13
MARKING
DIAGRAM
(Top View)
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
ORDERING INFORMATION
PIN CONNECTION
N−Ch
30 V
125 mW @ 2.5 V
90 mW @ 4.5 V
R
DS(on)
MAX
2.6 A
I
D
MAX (Note 1)V
(BR)DSS
170 mW @ −4.5 V
300 mW @ −2.5 V
G1
S1
N−CHANNEL MOSFET
D1
P−Ch
−30 V
−1.9 A
TA MG
G
1
1
2.2 A
−1.0 A
(Note: Microdot may be in either location)
NTGD4167C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol N/P Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
N
V
GS
= 0 V
I
D
= 250 mA
30
V
P
I
D
= −250 mA
−30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
N 21.4 mV/°C
P 22.2
Zero Gate Voltage Drain Current I
DSS
N
V
GS
= 0 V, V
DS
= 24 V
T
J
= 25 °C
1.0 mA
P
V
GS
= 0 V, V
DS
= −24 V
−1.0
N
V
GS
= 0 V, V
DS
= 24 V
T
J
= 85 °C
10
P
V
GS
= 0 V, V
DS
= −24 V
−10
Gate−to−Source Leakage Current I
GSS
N
V
DS
= 0 V, V
GS
= ±12 V
±100
nA
P
V
DS
= 0 V, V
GS
= ±12 V
±100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
N
V
GS
= V
DS
I
D
= 250 mA
0.5 0.9 1.5
V
P
I
D
= −250 mA
−0.5 −1.1 −1.5
Drain−to−Source On Resistance R
DS(on)
N
V
GS
= 4.5 V , I
D
= 2.6 A
52 90
mW
V
GS
= 2.5 V , I
D
= 2.2 A
67 125
P
V
GS
= −4.5 V , I
D
= −1.9 A
130 170
V
GS
= −2.5 V, I
D
= −1.0 A
202 300
Forward Transconductance g
FS
N
V
DS
= 15 V, I
D
= 2.6 A
2.6
S
P
V
DS
= −15 V , I
D
= −1.9 A
2.6
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
N
f = 1 MHz, V
GS
= 0 V
V
DS
= 15 V
295
pF
Output Capacitance C
OSS
48
Reverse Transfer Capacitance C
RSS
27
Input Capacitance C
ISS
P V
DS
= −15 V
419
Output Capacitance C
OSS
51
Reverse Transfer Capacitance C
RSS
26
Total Gate Charge Q
G(TOT)
N V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 2.0 A
3.7 5.5
nC
Threshold Gate Charge Q
G(TH)
0.6
Gate−to−Source Gate Charge Q
GS
0.9
Gate−to−Drain “Miller” Charge Q
GD
0.8
Total Gate Charge Q
G(TOT)
P V
GS
= −4.5 V, V
DS
= −15 V, I
D
= −2.0 A
3.9 6.0
Threshold Gate Charge Q
G(TH)
0.6
Gate−to−Source Gate Charge Q
GS
1.0
Gate−to−Drain “Miller” Charge Q
GD
1.0
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
N
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 1.0 A, R
G
= 6.0 W
7.0
ns
Rise Time t
r
4.0
Turn−Off Delay Time t
d(OFF)
14
Fall Time t
f
2.0
Turn−On Delay Time t
d(ON)
P
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −1.0 A, R
G
= 6.0 W
8.0
Rise Time t
r
8.0
Turn−Off Delay Time t
d(OFF)
22
Fall Time t
f
8.0
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
NTGD4167C
http://onsemi.com
3
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol N/P Test Conditions Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
N
V
GS
= 0 V, T
J
= 25 °C
I
S
= 0.9 A
0.7 1.2
V
P
I
S
= −0.9 A
−0.8 −1.2
Reverse Recovery Time t
RR
N
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms, I
S
= 0.9 A
8.0
ns
Charge Time t
a
5.0
Discharge Time t
b
3.0
Reverse Recovery Charge Q
RR
3.0 nC
Reverse Recovery Time t
RR
P
V
GS
= 0 V,
dI
S
/ dt = 100 A/ms, I
S
= −0.9 A
12
ns
Charge Time t
a
10
Discharge Time t
b
2.0
Reverse Recovery Charge Q
RR
7.0 nC
P1-P3P4-P6P7-P9P10-P10

NTGD4167CT1G

Mfr. #:
Buy NTGD4167CT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET COMP 30V 2.9A 0.090 TSOP6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet