NTGD4167C
http://onsemi.com
4
N−CHANNEL TYPICAL CHARACTERISTICS
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
T
J
= 25°C
V
GS
= 4.5 V
3.5 V
2.5 V
2.0 V
1.5 V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.75 1 1.25 1.5 1.75 2 2.25 2.5
V
DS
= 5 V
125°C
−55°C
25°C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
T
J
= 25°C
I
D
= 2.6 A
V
GS
, GATE VOLTAGE (V)
Figure 3. On−Region vs. Gate−To−Source
Voltage
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 2.5 V
I
D
, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
−50 −25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
I
D
= 2.6 A
V
GS
= 4.5 V
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
Figure 6. Capacitance Variation
