NTGD4167C
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7
P−CHANNEL TYPICAL CHARACTERISTICS
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−I
D
, DRAIN CURRENT (A)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. On−Region Characteristics
V
GS
= −5.0 V to −3.5 V
−2.5 V
−3.0 V
−2.0 V
−1.5 V
−I
D
, DRAIN CURRENT (A)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 14. Transfer Characteristics
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
V
DS
= −5 V
125°C
−55°C
25°C
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (W)
T
J
= 25°C
I
D
= −1.9 A
−V
GS
, GATE VOLTAGE (V)
Figure 15. On−Region vs. Gate−To−Source
Voltage
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 1.0 2.0 3.0 4.0 5.0 6.0 7.
T
J
= 25°C
V
GS
= −4.5 V
V
GS
= −2.5 V
−I
D
, DRAIN CURRENT (A)
Figure 16. On−Resistance vs. Drain Current
and Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
−50 −25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
T
J
, JUNCTION TEMPERATURE (°C)
Figure 17. On−Resistance Variation with
Temperature
I
D
= −1.9 A
V
GS
= −4.5 V
0
50
100
150
200
250
300
350
400
450
500
550
0 5 10 15 20 25 30
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
Figure 18. Capacitance Variation
