2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On-/off-states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
1200 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 1200 V
1 µA
V
GS
= 0 V, V
DS
= 1200 V
T
C
= 125 °C
(1)
50 µA
I
GSS
Gate body leakage current
V
DS
= 0 V, V
GS
= ±20 V
±10 µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 100 µA
3 4 5 V
R
DS(on)
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 2.5 A
1.65 2.00 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic characteristics
Symbol
Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, V
GS
= 0 V,
f = 1 MHz
- 505 - pF
C
oss
Output capacitance - 44 - pF
C
rss
Reverse transfer capacitance - 0.4 - pF
C
o(tr)
(1)
Time-related equivalent capacitance
V
DS
= 0 to 960 V, V
GS
= 0 V
- 70 - pF
C
o(er)
(2)
Energy-related equivalent capacitance - 24 - pF
R
g
Intrinsic gate resistance
f = 1 MHz , I
D
= 0 A
- 7.7 - Ω
Q
g
Total gate charge
V
DD
= 960 V, I
D
= 5 A
V
GS
= 0 to 10 V
(see Figure 14. Test circuit for
gate charge behavior )
- 13.7 - nC
Q
gs
Gate-source charge - 3.6 - nC
Q
gd
Gate-drain charge - 7.1 - nC
1. C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2. C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Table 6. Switching times
Symbol
Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 600 V, I
D
= 2.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
- 15.5 - ns
t
r
Rise time - 11 - ns
t
d(off)
Turn-off delay time - 40 - ns
t
f
Fall time - 27 - ns
STP8N120K5
Electrical characteristics
DS12529 - Rev 3
page 3/13
