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STP8N120K5
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
3
T
est circuits
Figure 13.
T
est circuit for resistive load switching times
AM01468v1
V
D
R
G
R
L
D.U.T
.
2200
μF
V
DD
3.3
μF
+
pulse width
V
GS
Figure 14.
T
est circuit for gate charge behavior
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
I
G
= CONST
100 Ω
100 nF
D.U.T
.
+
pulse width
V
GS
2200
μF
V
G
V
DD
Figure 15.
T
est circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T
.
S
B
G
25 Ω
A
A
B
B
R
G
G
D
S
100 µH
µF
3.3
1000
µF
V
DD
D.U.T
.
+
_
+
fast
diode
Figure 16.
Unclamped inductive load test circuit
AM01471v1
V
D
I
D
D.U.T
.
L
V
DD
+
pulse width
V
i
3.3
µF
2200
µF
Figure 17.
Unclamped inductive waveform
AM01472v1
V
(BR)DSS
V
DD
V
DD
V
D
I
DM
I
D
Figure 18.
Switching time waveform
AM01473v1
0
V
GS
90%
V
DS
90%
10%
90%
10%
10%
t
on
t
d(on)
t
r
0
t
off
t
d(off)
t
f
STP8N120K5
T
est circuits
DS12529
-
Rev 3
page 7/13
4
Package information
In order to meet environmental requirements, ST offers these devices in dif
ferent grades of ECOP
ACK
®
packages, depending on their level of environmental compliance. ECOP
ACK
®
specifications, grade definitions
and product status are available at:
www
.st.com
. ECOP
ACK
®
is an ST trademark.
STP8N120K5
Package information
DS12529
-
Rev 3
page 8/13
4.1
TO-220 type A package information
Figure 19.
TO-220 type A package outline
0015988_typeA_Rev_21
STP8N120K5
TO-220 type A package information
DS12529
-
Rev 3
page 9/13
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
STP8N120K5
Mfr. #:
Buy STP8N120K5
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220 package
Lifecycle:
New from this manufacturer.
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STP8N120K5