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SI4356-B1A-FMR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
Si4356
4 Rev 1.2
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter Symbol Test Condition Min Typ Max Unit
Ambient Temperature T
A
— –40 25 85 C
Supply Voltage V
DD
—1.8—3.6V
I/O Drive Voltage V
GPIO
—1.8—3.6V
Table 2. DC Characteristics
*
Parameter Symbol Test Condition Min Typ Max Unit
Standby Mode Current
I
Standby
Configuration retained, all other functions OFF — 50 — nA
RX Mode Current I
RX
——12—mA
*Note: All specifications guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in the "Production Test Conditions" section of "1.1. Definition of Test Conditions" on page 8.
Table 3. Receiver Electrical Characteristics
1
Parameter Symbol Test Condition Min Typ Max Unit
Frequency Range F
RANGE
Only frequencies listed in Table 9
supported
315 — 917 MHz
Sensitivity
2
P
FSK
BER < 0.1%, 2.4 kbps, (G)FSK,
Configuration = FSK1 (See Section 3.)
—–113—dBm
P
FSK
BER < 0.1%, 2.4 kbps, (G)FSK,
Configuration = FSK6 (See Section 3.)
–104 dBm
P
OOK
BER < 0.1%, 2.4 kbps, OOK,
Configuration = OOK6 (See Section 3.)
—–111—dBm
RX Channel Bandwidth
3
BW — 100 — 535 kHz
BER Variation vs Power
Level
3
P
RX_RES
Up to +5 dBm Input Level — 0 0.1 ppm
Notes:
1. Test conditions and max limits are listed in section “1.1. Definition of Test Conditions”.
2. Sensitivity measured at 434 MHz using a PN9 modulated input signal. Received signal is filtered, deglitched, and
retimed using an external RC filter (R = 1
k, C = 47 nF) and MCU.
3. Guaranteed by qualification. Qualification test conditions are listed in section “1.1. Definition of Test Conditions”.
Si4356
Rev 1.2 5
200 kHz Selectivity
3
C/I
1-CH
Desired Ref Signal 3 dB above sensitiv-
ity, BER < 0.1%. Interferer is CW and
desired modulated with
2.4 kbps F = 30 kHz (G)FSK,
BT = 0.5,
Rx BW = 155 kHz,
—–42—dB
400 kHz Selectivity
3
C/I
2-CH
—–50—dB
Blocking 1 MHz Offset
3
— Desired Ref Signal 3 dB above sensitiv-
ity, BER < 0.1% Interferer is CW and
desired modulated with 2.4 kbps
F = 30 kHz (G)FSK, BT = 0.5,
RX BW = 155 kHz
—–57—dB
Blocking 8 MHz Offset
3
——–68—dB
Image Rejection
3
Im
REJ
IF = 468 kHz — –35 — dB
Spurious Emissions
3
P
OB_RX1
Measured at RX pins — — –54 dBm
Table 4. Auxiliary Block Specifications
1
Parameter Symbol Test Condition Min Typ Max Unit
XTAL Nominal Cap
3
———10—pF
XTAL Frequency — — — 30 — MHz
XTAL Series Resistance — — — — 50
XTAL Stability — — — ±50 — ppm
Reset to RX Time
2
t
RST
———20ms
Notes:
1. Test conditions and max limits are listed in section in “1.1. Definition of Test Conditions”.
2. Guaranteed by qualification. Qualification test conditions are listed in the "Qualification Test Conditions" subsection of
section “1.1. Definition of Test Conditions”.
3. Targeted nominal capacitive load for both XIN and XOUT pins.
Table 3. Receiver Electrical Characteristics
1
(Continued)
Parameter Symbol Test Condition Min Typ Max Unit
Notes:
1. Test conditions and max limits are listed in section “1.1. Definition of Test Conditions”.
2. Sensitivity measured at 434 MHz using a PN9 modulated input signal. Received signal is filtered, deglitched, and
retimed using an external RC filter (R = 1
k, C = 47 nF) and MCU.
3. Guaranteed by qualification. Qualification test conditions are listed in section “1.1. Definition of Test Conditions”.
Si4356
6 Rev 1.2
Table 5. Digital I/O Specifications (STBY, RX_DATA, MSTAT, CLK_OUT)
1
Parameter Symbol Test Condition Min Typ Max Unit
Rise Time T
RISE
0.1xV
DD
to 0.9xV
DD
,
C
L
=10pF, DRV<1:0≥HH
—2.3 — ns
Fall Time T
FALL
0.9xV
DD
to 0.1xV
DD
,
C
L
=10pF, DRV<1:0≥HH
—2.0 — ns
Input Capacitance C
IN
—–2—pF
Logic High Level Input
Voltage
V
IH
—V
DD
x0.7 – — V
Logic Low Level Input
Voltage
V
IL
———V
DD
x0.3 V
Input Current (STBY)
2
I
IN
0<V
IN
<V
DD
–10 — 10 µA
Input Current (STBY)
2
I
INP
V
IL
= 0 V 1 — 10 µA
Drive Strength for Out-
put Low Level
2, 3
I
OL
RX_DATA, MSTAT, CLK_OUT — 1.13 — mA
Drive Strength for Out-
put High Level
2, 3
I
OH
RX_DATA, MSTAT — 0.96 — mA
Drive Strength for Out-
put High Level
2, 3
I
OH
CLK_OUT — 0.80 — mA
Logic High Level Out-
put Voltage
V
OH
I
OUT
= 500 µA V
DD
x0.8 – — V
Logic Low Level Out-
put Voltage
V
OL
I
OUT
= 500 µA — — V
DD
x0.2 V
CLK_OUT Frequency F
CLK
Rx Freq = 315 MHZ — 10 — MHz
All other frequencies — 15 — MHz
CLK_OUT Duty Cycle — — — 50 — %
Notes:
1. Guaranteed by qualification. Qualification test conditions are listed in Section “1.1. Definition of Test Conditions”.
2. Currents listed are during normal operation after power up sequence is complete.
3. Output currents measured at 3.3 VDC V
DD
with V
OH
= 2.64 VDC and V
OL
= 0.66 VDC.
Table 6. Thermal Characteristics
Parameter Symbol Test Condition Value Unit
Thermal Resistance Junction to Ambient
JA
Still Air
30 C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26

SI4356-B1A-FMR

Mfr. #:
Buy SI4356-B1A-FMR
Manufacturer:
Silicon Labs
Description:
RF Receiver RX sub-GHz receiver
Lifecycle:
New from this manufacturer.
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