Document Number: 38-16015 Rev. *K Page 16 of 30
Absolute Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient Temperature
with Power Applied .................................. –55 °C to +125 °C
Supply Voltage on any power supply pin
relative to V
SS
..............................................–0.3 V to +3.9 V
DC Voltage to Logic Inputs
[8]
...............–0.3 V to V
I/O
+0.3 V
DC Voltage applied to Outputs
in High-Z State ......................................–0.3 V to V
I/O
+0.3 V
Static Discharge Voltage (Digital)
[9]
........................>2000 V
Static Discharge Voltage (RF)
[9]
.............................. 1100 V
Latch Up Current ....................................+200 mA, –200 mA
Operating Conditions
V
CC
..................................................................2.4 V to 3.6 V
V
I/O
..................................................................1.8 V to 3.6 V
V
BAT
.................................................................1.8 V to 3.6 V
T
A
(Ambient Temperature Under Bias) .......... 0 °C to +70 °C
Ground Voltage ................................................................0 V
F
OSC
(Crystal Frequency) ......................... 12 MHz ± 30 ppm
DC Characteristics
(T = 25C, V
BAT
= 2.4 V, PMU disabled, f
OSC
= 12.000000 MHz)
Parameter Description Conditions Min Typ Max Unit
V
BAT
Battery Voltage 0C–70 C 1.8 – 3.6 V
V
REG
[10]
PMU Output Voltage 2.4 V mode 2.4 2.43 – V
V
REG
[10]
PMU Output Voltage 2.7 V mode 2.7 2.73 – V
V
I/O
[11]
V
I/O
Voltage 1.8 – 3.6 V
V
CC
V
CC
Voltage 0C–70 C2.4
[12]
–3.6V
V
OH1
Output High Voltage Condition 1 At I
OH
= –100.0 µA V
I/O
– 0.2 V
I/O
–V
V
OH2
Output High Voltage Condition 2 At I
OH
= –2.0 mA V
I/O
– 0.4 V
I/O
–V
V
OL
Output Low Voltage At I
OL
= 2.0 mA – 0 0.45 V
V
IH
Input High Voltage 0.7 V
I/O
–V
I/O
V
V
IL
Input Low Voltage 0 – 0.3 V
I/O
V
I
IL
Input Leakage Current 0 < V
IN
< V
I/O
–1 0.26 +1 µA
C
IN
Pin Input Capacitance except XTAL, RF
N
, RF
P
, RF
BIAS
– 3.5 10 pF
I
CC
(GFSK)
[13]
Average TX I
CC
, 1 Mbps,
slow channel
PA = 5, 2 way, 4 bytes/10 ms – 0.87 – mA
I
CC
(32-8DR)
[13]
Average TX I
CC
, 250 kbps,
fast channel
PA = 5, 2 way, 4 bytes/10 ms – 1.2 – mA
I
SB
[14]
Sleep Mode I
CC
– 0.8 10 µA
I
SB
[14]
Sleep Mode I
CC
PMU enabled – 31.4 – µA
IDLE I
CC
Radio off, XTAL Active XOUT disabled – 1.0 – mA
Notes
8. It is permissible to connect voltages above V
I/O
to inputs through a series resistor limiting input current to 1 mA. AC timing not guaranteed.
9. Human Body Model (HBM).
10. V
REG
depends on battery input voltage.
11. In sleep mode, the I/O interface voltage reference is V
BAT
.
12. In sleep mode, V
CC
min. can be as low as 1.8 V.
13. Includes current drawn while starting crystal, starting synthesizer, transmitting packet (including SOP and CRC16), changing to receive mode, and receiving ACK
handshake. Device is in sleep except during this transaction.
14. ISB is not guaranteed if any I/O pin is connected to voltages higher than V
I/O
.
