6.42
11
IDT71P71204 (2M x 8-Bit), 71P71104 (2M x 9-Bit), 71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
Advance Information
18 Mb DDR II SRAM Burst of 2 Commercial Temperature Range
Absolute Maximum Ratings
(1) (2)
Capacitance (TA = +25°C, f = 1.0MHz)
(1)
V
Supply Voltage on V
with
Re spect to GND
–0.5 to +2.9 V
V
Supply Voltage on V
with
Re spect to GND
–0.5 to V
+0.3 V
V
Vo ltag e on Inp ut te rm inals with
re s pe c t to G ND
–0.5 to V
+0.3 V
V
Voltage on Output and I/O
te rm inals with re s p e c t to G ND.
–0.5 to V
+0.3 V
T
Temperature Under Bias –55 to +125 °C
T
Storage Temperature –65 to +150 °C
I
Continuous Current into Outputs + 20 mA
C
Input Capacitance
V
= 1.8V
V
= 1.5V
5pF
C
Clock Input Capacitance 6 pF
C
Output Capacitance 7 pF
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VDDQ must not exceed VDD during normal operation.
NOTE:
1. Tested at characterization and retested after any design or process change that
may affect these parameters.
Recommended DC Operating and
Temperature Conditions
V
DD
Power Supply
Voltage
1.7 1.8 1.9 V
V
DDQ
I/O Supply Voltage 1.4 1.5 1.9 V
V
SS
Ground 0 0 0 V
V
REF
Input Reference
Voltage
0.68 V
DDQ
/2 0.95 V
T
A
Ambient
Temperature
(1)
0
+70
o
6112 tbl 04
NOTE:
1. During production testing, the case temperature equals the ambient
temperature.
