March 2008 Rev 8 1/16
16
STGB30NC60W - STGP30NC60W
STGW30NC60W
30 A - 600 V - ultra fast IGBT
Features
High frequency operation
Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Applications
High frequency motor controls, inverters, ups
HF, SMPS and PFC in both hard switch and
resonant topologies
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
1
2
3
TO-247
1
2
3
TO-220
1
3
D²PAK
Table 1. Device summary
Order codes Marking Package Packaging
STGB30NC60WT4 GB30NC60W D²PAK Tape and reel
STGP30NC60W GP30NC60W TO-220 Tube
STGW30NC60W GW30NC60W TO-247 Tube
www.st.com
Contents STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STGB30NC60WT4 - STGP30NC60W - STGW30NC60W Electrical ratings
3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at 25 °C 60 A
I
C
(1)
Collector current (continuous) at 100 °C 30 A
I
CL
(2)
2. Vclamp = 80%(V
CES
), T
j
=150 °C, R
G
=10 , V
GE
=15 V
Turn-off latching current 150 A
I
CP
(3)
3. Pulse width limited by max junction temperature allowed
Pulsed collector current 150 A
V
GE
Gate-emitter voltage ± 20 V
P
TOT
Total dissipation at T
C
= 25 °C
200 W
T
j
Operating junction temperature – 55 to 150 °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
TO-247
TO-220
D²PAK
R
thj-case
Thermal resistance junction-case max 0.62 °C/W
R
thj-amb
Thermal resistance junction-ambient max 50 62.5 °C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ C
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=

STGP30NC60W

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-channel MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet