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STGP30NC60W

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
4/16
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 1 mA
600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
=15 V, I
C
= 20 A
V
GE
=15 V, I
C
= 20 A,Tc= 125 °C
2.1
1.8
2.5 V
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 250 µA
3.75 5.75 V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
V
CE
= 600 V, Tc=125 °C
10
1
µA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±20 V
± 100 nA
g
fs
(1)
1. Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance
V
CE
= 15 V
,
I
C
= 20 A
15 S
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
=0
2080
175
52
pF
pF
pF
Q
g
Q
ge
Q
gc
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 390 V, I
C
= 20 A,
V
GE
= 15 V,
(see Figure 17)
102
17.5
47
nC
nC
nC
STGB30NC60WT4 - STGP30NC60W - STGW30NC60W Electrical characteristics
5/16
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390 V, I
C
= 20 A
R
G
= 10 Ω, V
GE
= 15 V,
(see Figure 16)
29.5
12
1640
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
Turn-on delay time
Current rise time
Turn-on current slope
V
CC
= 390 V, I
C
= 20 A
R
G
= 10 Ω, V
GE
= 15 V,
T
C
= 125 °C (see Figure 16)
29
13.5
1600
ns
ns
A/µs
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
cc
= 390 V, I
C
= 20 A,
R
G
= 10 Ω, V
GE
= 15 V
(see Figure 18)
19.5
118
27
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
V
cc
= 390 V, I
C
= 20 A,
R
G
=10 Ω, V
GE
=15 V,
T
C
=125 °C (see Figure 18)
46
151
38
ns
ns
ns
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
on
E
off
(1)
E
ts
1. Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 20 A
R
G
= 10 Ω, V
GE
= 15 V,
(see Figure 18)
305
181
486
µJ
µJ
µJ
E
on
E
off
(1)
E
ts
Turn-on switching losses
Turn-off switching losses
Total switching losses
V
CC
= 390 V, I
C
= 20 A
R
G
= 10 Ω, V
GE
= 15 V,
T
C
= 125 °C (see Figure 18)
455
355
801
µJ
µJ
µJ
Electrical characteristics STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
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2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs
temperature
Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
V
CE
(V)
-75 -50 -25 0 25 50 75 100 125 150 T
J
(°C)
HV28940
I
C
=10A
20A
30A
40A
V
GE
=15V
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STGP30NC60W

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IGBT Transistors N-channel MOSFET
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