STGB30NC60WT4 - STGP30NC60W - STGW30NC60W Electrical characteristics
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Figure 8. Normalized gate threshold voltage
vs temperature
Figure 9. Collector-emitter on voltage vs
collector current
Figure 10. Normalized breakdown voltage vs
temperature
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
V
CE
(V)
0 5 10 15 20 25 30 354045505560I
C
(A)
T
J
=-50°C
T
J
=25°C
T
J
=150°C
HV28950
Electrical characteristics STGB30NC60WT4 - STGP30NC60W - STGW30NC60W
8/16
Figure 14. Thermal impedance Figure 15. Turn-off SOA
STGB30NC60WT4 - STGP30NC60W - STGW30NC60W Test circuit
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3 Test circuit
Figure 16. Test circuit for inductive load
switching
Figure 17. Gate charge test circuit
Figure 18. Switching waveform

STGP30NC60W

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-channel MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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