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STGP30NC60W
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
STGB30NC60WT4 - STGP30NC60W - STGW30NC6
0W
Electrical cha
racteristics
7/16
Figure 8.
No
rmalize
d gate threshol
d v
oltage
vs tempe
rature
Figure 9.
Collector
-emitter on v
oltage vs
collector cu
rrent
Figure 10.
Normalized breakdo
wn v
oltage vs
temperature
Figure 11.
Switc
hing losses vs temp
erature
Figure 12.
Switc
hing losses vs
gate resistance
Figure 13.
Switching losses v
s collector
current
0.
8
1
1.2
1.4
1.6
1.
8
2
2.2
2.4
2.6
2.
8
3
3
.2
3
.4
V
CE
(V)
0
5
10
15
20
25
3
0
3
54
04
55
05
56
0
I
C
(A)
T
J
=-50°C
T
J
=25°C
T
J
=150°C
HV2
8
950
Electrical ch
aracteristic
s
STGB30NC60WT4 - STGP30NC60W - STGW30
NC60W
8/16
Figure 14.
Thermal impedance
Figure 15.
T
urn-off SO
A
STGB30NC60WT4 - STGP30NC60W - STGW30NC6
0W
Test circuit
9/16
3
T
est cir
cuit
Figure 16.
T
est circuit for inductive load
switching
Figure 17.
Gate c
harge test
cir
cuit
Figure 18.
Switching
wavef
orm
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
STGP30NC60W
Mfr. #:
Buy STGP30NC60W
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N-channel MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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STGP30NC60W
STGW30NC60W