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ADG733BRUZ-REEL7

P1-P3P4-P6P7-P9P10-P12
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
ADG733/ADG734
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2014
CMOS, 2.5 Low Voltage,
Triple/Quad SPDT Switches
FEATURES
1.8 V to 5.5 V Single Supply
2.5 V Dual Supply
2.5 On Resistance
0.5 On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG733
Quad SPDT: ADG734
Small TSSOP and QSOP Packages
Low Power Consumption
TTL/CMOS Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery Powered Systems
GENERAL DESCRIPTION
The ADG733 and ADG734 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.
Low power consumption and operating supply range of 1.8 V to
5.5 V and dual ±2.5 V make the ADG733 and ADG734 ideal for
battery powered, portable instruments. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels. An EN input on the ADG733 is
used to enable or disable the device. When disabled, all channels
are switched OFF.
These 2–1 multiplexers/SPDT switches are designed on an
enhanced submicron process that provides low power dissipation
yet gives high switching speed, very low on resistance, high signal
bandwidths, and low leakage currents. On resistance is in the
region of a few ohms, is closely matched between switches, and is
very flat over the full signal range. These parts can operate equally
well in either direction and have an input signal range that extends
to the supplies.
The ADG733 is available in small TSSOP and QSOP packages,
while the ADG734 is available in a small TSSOP package.
PRODUCT HIGHLIGHTS
1. Single/Dual Supply Operation. The ADG733 and ADG734 are
fully specified and guaranteed with 3 V and 5 V single supply
rails and ±2.5 V dual supply rails.
2. Low On Resistance (2.5 Ω typical)
3. Low Power Consumption (<0.01 µW)
4. Guaranteed Break-Before-Make Switching Action
FUNCTIONAL BLOCK DIAGRAMS
S1B
D1
S1A
A0
S2A
D2
S2B
S3B
D3
S3A
A1
ADG733
SWITCHES SHOWN FOR A “1” INPUT LOGIC
S1A
D1
S1B
IN1
IN2
S2B
D2
S2A
S3A
D3
S3B
IN3
IN4
S4B
D2
S4A
ADG734
EN
A2
LOGIC
REV. B
–2–
ADG733/ADG734–SPECIFICATIONS
1
B Version
–40C
Parameter +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
4.5 5.0 Ω max Test Circuit 1
On Resistance Match between 0.1 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
Channels (∆R
ON
) 0.4 Ω max
On Resistance Flatness (R
FLAT(ON)
) 0.5 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
1.2 Ω max
LEAKAGE CURRENTS V
DD
= 5.5 V
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
D
= 4.5 V/1 V, V
S
= 1 V/4.5 V;
± 0.1 ± 0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 nA typ V
D
= V
S
= 1 V, or 4.5 V;
± 0.1 ± 0.5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
± 0.1 µA max
C
IN
, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
19 ns typ R
L
= 300 Ω, C
L
= 35 pF;
34 ns max V
S
= 3 V, Test Circuit 4
t
OFF
7 ns typ R
L
= 300 Ω, C
L
= 35 pF;
12 ns max V
S
= 3 V, Test Circuit 4
ADG733 t
ON
(EN)20 ns typ R
L
= 300 Ω, C
L
= 35 pF;
40 ns max V
S
= 3 V, Test Circuit 5
t
OFF
(EN)7 ns typ R
L
= 300 Ω, C
L
= 35 pF;
12 ns max V
S
= 3 V, Test Circuit 5
Break-Before-Make Time Delay, t
D
13 ns typ R
L
= 300 Ω, C
L
= 35 pF;
1 ns min V
S
= 3 V, Test Circuit 6
Charge Injection ± 3pC typ V
S
= 2 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 7
Off Isolation –72 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Channel-to-Channel Crosstalk –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
–3 dB Bandwidth 160 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 10
C
S
(OFF) 11 pF typ f = 1 MHz
C
D
, C
S
(ON) 34 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 5.5 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 5.5 V
1.0 µA max
NOTES
1
Temperature range is as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 5 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
REV. B
–3–
ADG733/ADG734
B Version
–40C
Parameter +25C to +85C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
)6 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA;
11 12 Ω max Test Circuit 1
On Resistance Match between 0.1 Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
Channels (∆R
ON
) 0.4 Ω max
On Resistance Flatness (R
FLAT(ON)
)3Ω typ V
S
= 0 V to V
DD
, I
DS
= 10 mA
LEAKAGE CURRENTS V
DD
= 3.3 V
Source OFF Leakage I
S
(OFF) ± 0.01 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
± 0.1 ± 0.3 nA max Test Circuit 2
Channel ON Leakage I
D
, I
S
(ON) ± 0.01 nA typ V
S
= V
D
= 1 V or 3 V;
± 0.1 ± 0.5 nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current
I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
± 0.1 µA max
C
IN
, Digital Input Capacitance 4 pF typ
DYNAMIC CHARACTERISTICS
2
t
ON
28 ns typ R
L
= 300 Ω, C
L
= 35 pF;
55 ns max V
S
= 2 V, Test Circuit 4
t
OFF
9 ns typ R
L
= 300 Ω, C
L
= 35 pF;
16 ns max V
S
= 2 V, Test Circuit 4
ADG733 t
ON
(EN)29 ns typ R
L
= 300 Ω, C
L
= 35 pF;
60 ns max V
S
= 2 V, Test Circuit 5
t
OFF
(EN)9 ns typ R
L
= 300 Ω, C
L
= 35 pF;
16 ns max V
S
= 2 V, Test Circuit 5
Break-Before-Make Time Delay, t
D
22 ns typ R
L
= 300 Ω, C
L
= 35 pF;
1 ns min V
S
= 2 V, Test Circuit 6
Charge Injection ± 3pC typ V
S
= 1 V, R
S
= 0 Ω, C
L
= 1 nF;
Test Circuit 7
Off Isolation –72 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
Channel-to-Channel Crosstalk –67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
Test Circuit 9
–3 dB Bandwidth 160 MHz typ R
L
= 50 Ω, C
L
= 5 pF, Test Circuit 10
C
S
(OFF) 11 pF typ f = 1 MHz
C
D
, C
S
(ON) 34 pF typ f = 1 MHz
POWER REQUIREMENTS V
DD
= 3.3 V
I
DD
0.001 µA typ Digital Inputs = 0 V or 3.3 V
1.0 µA max
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(V
DD
= 3 V 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.)
SPECIFICATIONS
1
P1-P3P4-P6P7-P9P10-P12

ADG733BRUZ-REEL7

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Buy ADG733BRUZ-REEL7
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 72dB 2.5 Ohm 160MHz CMOS Triple SPDT
Lifecycle:
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