OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

AFT21S220W02GSR3

P1-P3P4-P6P7-P9P10-P12P13-P15
AFT21S220W02SR3 AFT21S220W02GSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W RF power LDMOS transistors are designed for cellular bas e
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
= 1200 mA, P
out
= 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 18.9 29.8 7.2 –34.0 –18
2140 MHz 19.1 29.3 7.1 –34.0 –25
2170 MHz 19.2 28.9 7.0 –34.0 –17
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT21S220W02S
Rev. 0, 2/2014
Freescale Semiconductor
Technical Data
2110–2170 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT21S220W02SR3
AFT21S220W02GSR3
Figure 1. Pin Connections
NI--780S--2L
AFT21S220W02SR3
NI--780GS--2L
AFT21S220W02GSR3
(Top View)
RF
in
/V
GS
21
RF
out
/V
DS
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
–0.5, +65 Vdc
Gate--Source Voltage V
GS
–6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
–65 to +150 C
Case Operating Temperature Range T
C
–40 to +125 C
Operating Junction Temperature Range
(1,2)
T
J
–40 to +225 C
CW Operation @ T
C
=25C
Derate above 25C
CW 92
0.41
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 91C, 50 W CW, 28 Vdc, I
DQ
= 1200 mA, 2140 MHz
R
JC
0.56 C/W
Table 3. ESD Pro tection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22-- A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 5 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 300 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 1200 mAdc, Measured in Functional Test)
V
GS(Q)
1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=3.0Adc)
V
DS(on)
0.1 0.15 0.3 Vdc
Functional Tests
(4,5)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, P
out
= 50 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
18.1 19.1 21.1 dB
Drain Efficiency
D
26.0 29.3 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.6 7.1 — dB
Adjacent Channel Power Ratio ACPR — –34.0 –32.0 dBc
Input Return Loss IRL — –25 –12 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT21S220W02SR3 AFT21S220W02GSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) I
DQ
= 1200 mA, f = 2140 MHz, 120 sec P ulse Width, 10% Duty Cycle
VSWR 10:1 at 30 Vdc, 250 W Pulse Output Power
(3 dB Input Overdrive from 180 W Pulse Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 1200 mA, 2110–2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, 120 sec Pulse Width, 10% Duty
Cycle
P1dB — 209 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
— –18 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 80 — MHz
Gain Flatness in 60 MHz Bandwidth @ P
out
=50WAvg. G
F
— 0.3 — dB
Gain Variation over Temperature @ 166 W CW
(–30Cto+85C)
G — 0.02 — dB/C
Output Power Variation over Temperature @ 166 W CW
(–30Cto+85C)
(1)
P1dB — 0.01 — dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P1-P3P4-P6P7-P9P10-P12P13-P15

AFT21S220W02GSR3

Mfr. #:
Buy AFT21S220W02GSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 2110-2170 MHz 50 W Avg. 28 V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet