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AFT21S220W02GSR3

P1-P3P4-P6P7-P9P10-P12P13-P15
AFT21S220W02SR3 AFT21S220W02GSR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,I
DQ
= 1260 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.14 + j5.71 3.09 - j5.64 18.8 54.2 264 50.3 -12
2140 3.62 - j5.77 4.06 + j5.98 3.37 - j5.73 18.8 54.1 255 49.0 -12
2170 4.75 - j5.91 5.19 + j5.97 3.49 - j5.61 19.0 54.0 253 49.5 -13
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.35 + j5.99 3.70 - j6.29 16.6 55.1 322 51.8 -17
2140 3.62 - j5.77 4.42 + j6.26 3.88 - j6.19 16.6 55.0 314 51.0 -18
2170 4.75 - j5.91 5.69 + j6.11 4.28 - j6.16 16.6 54.9 310 50.7 -18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 7. Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,I
DQ
= 1260 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.17 + j5.81 2.97 - j3.19 20.7 52.9 196 59.1 -18
2140 3.62 - j5.77 4.19 + j6.13 2.59 - j3.06 20.7 52.6 183 58.3 -21
2170 4.75 - j5.91 5.36 + j5.92 2.76 - j3.04 20.8 52.6 183 58.6 -20
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.32 + j6.09 3.03 - j3.22 18.7 53.7 233 61.4 -27
2140 3.62 - j5.77 4.46 + j6.38 2.64 - j3.06 18.7 53.3 215 60.3 -29
2170 4.75 - j5.91 5.78 + j6.11 2.85 - j3.15 18.7 53.5 222 60.5 -28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
IMAGINARY ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
46
58
56
54
52
50
48
19.5
20
19
18.5
18
20.5
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1 4
-- 1 2
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
42
44
21
17.5
17
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
P
E
P
E
P
E
P
E
50.5
53.5
53
52.5
51
51.5
52
54
50
53.5
53
52.5
52
AFT21S220W02SR3 AFT21S220W02GSR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5
5
4
6
-- 1
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
REAL ()
IMAGINARY ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
54.5
54
51.5
52
48
60
58
56
54
52
50
46
15.5
15
19
18.5
18
17.5
17
16.5
-- 2 6
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
52.5
53.5
53
44
16
-- 2 8
-- 3 0
-- 3 2
P
E
P
E
P
E
P
E
52
52
-- 1 8
54
53.5
53
P1-P3P4-P6P7-P9P10-P12P13-P15

AFT21S220W02GSR3

Mfr. #:
Buy AFT21S220W02GSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 2110-2170 MHz 50 W Avg. 28 V
Lifecycle:
New from this manufacturer.
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