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AFT21S220W02GSR3

P1-P3P4-P6P7-P9P10-P12P13-P15
4
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
*C1, C11, C12, C15 and C16 are mounted vertically.
C1*
C2
C7
V
GG
V
GG
V
DD
C3
C4
R1
C8
R2
C5
C6
C10
C11*
C12*
C15*
C16*
C9
C17
C13
C14
C18
D57394
AFT21S220W02S
Rev. 2
Figure 2. A FT21S220W02SR3 Test Circuit Component Layout
CUT OUT AREA
Table 5. AFT21S220W02SR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1,C4,C6,C11,C12,C16 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C2 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C3, C5 0.1 F Chip Capacitors C1206C104K1RACTU Kemet
C7, C8, C9, C10, C13, C14 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C15 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C17, C18 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1, R2 4.75 , 1/4 W Chip Resistors CRCW12064R75FNEA Vishay
PCB Rogers RO4350B, 0.020,
r
=3.66 D57394 MTL
AFT21S220W02SR3 AFT21S220W02GSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2060
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 50 Watts Avg.
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
18
20
19.8
19.6
-- 3 5
32
31
30
29
--32.5
-- 3 3
--33.5
-- 3 4
D
, DRAIN
EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
2080 2100 2120 2140 2160 2180 2200 2220
28
--34.5
-- 3 0
ACPR (dBc)
PARC
Figure 4. Intermodulation D istortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 5
0
-- 1 5
-- 3 0
-- 6 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 5
IM7--L
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
-- 1
-- 3
30
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20
40 50 70
15
45
40
35
30
25
20
D
DRAIN EFFICIENCY (%)
-- 3 d B = 5 6 W
60
D
ACPR
PARC
ACPR (dBc)
-- 4 5
-- 1 5
-- 2 0
-- 2 5
-- 3 5
-- 3 0
-- 4 0
19.6
G
ps
, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
G
ps
-- 1 d B = 3 1 W
-- 2 d B = 4 2 W
PARC (dB)
-- 3 . 2
-- 2 . 4
-- 2 . 6
-- 2 . 8
-- 3
-- 3 . 4
-- 5
G
ps
IM3--L
1
V
DD
=28Vdc,I
DQ
= 1200 mA, f = 2140 MHz
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
V
DD
=28Vdc,P
out
= 184 W (PEP)
I
DQ
= 1200 mA, T wo--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
100
IM5--L
IM7--U
IM3--U
IM5--U
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IRL
V
DD
=28Vdc,P
out
=50W(Avg.)
I
DQ
= 1200 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
200
6
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
TYPICAL CHARACTERISTICS
1
G
ps
ACPR
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
10
22
0
60
50
40
30
20
D
, DRAIN EFFICIENCY (%)
D
G
ps
, POWER GAIN (dB)
20
18
10 100 300
10
-- 6 0
ACPR (dBc)
16
14
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. Broadband Frequency Response
8
20
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 1200 mA
16
14
12
GAIN (dB)
18
10
1800 1900 2000 2100 2200 2300 2400 2500 2600
-- 3 5
25
15
5
-- 5
-- 1 5
IRL (dB)
-- 2 5
Gain
IRL
2110 MHz
2140 MHz
2170 MHz
V
DD
=28Vdc,I
DQ
= 1200 mA, Single--Carrier W--CDMA,
3.84 MHz Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
2110 MHz
2140 MHz
2170 MHz
200
P1-P3P4-P6P7-P9P10-P12P13-P15

AFT21S220W02GSR3

Mfr. #:
Buy AFT21S220W02GSR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 2110-2170 MHz 50 W Avg. 28 V
Lifecycle:
New from this manufacturer.
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