M48T08, M48T08Y, M48T18 Description
Doc ID 2411 Rev 11 7/31
Figure 4. Block diagram
AI01333
LITHIUM
CELL
OSCILLATOR AND
CLOCK CHAIN
V
PFD
INTV
CC
V
SS
32,768 Hz
CRYSTA L
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
8 x 8 BiPORT
SRAM ARRAY
8184 x 8
SRAM ARRAY
A0-A12
DQ0-DQ7
E1
E2
W
G
POWER
Operation modes M48T08, M48T08Y, M48T18
8/31 Doc ID 2411 Rev 11
2 Operation modes
As Figure 4 on page 7 shows, the static memory array and the quartz-controlled clock
oscillator of the M48T08/18/08Y are integrated on one silicon chip. The two circuits are
interconnected at the upper eight memory locations to provide user accessible
BYTEWIDE™ clock information in the bytes with addresses 1FF8h-1FFFh.
The clock locations contain the year, month, date, day, hour, minute, and second in 24-hour
BCD format. Corrections for 28, 29 (leap year - valid until 2100), 30, and 31 day months are
made automatically. Byte 1FF8h is the clock control register. This byte controls user access
to the clock information and also stores the clock calibration setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/WRITE memory cells. The M48T08/18/08Y
includes a clock control circuit which updates the clock bytes with current information once
per second. The information can be accessed by the user in the same manner as any other
location in the static memory array.
The M48T08/18/08Y also has its own power-fail detect circuit. The control circuitry
constantly monitors the single 5 V supply for an out-of-tolerance condition. When V
CC
is out
of tolerance, the circuit write protects the SRAM, providing a high degree of data security in
the midst of unpredictable system operation brought on by low V
CC
. As V
CC
falls below the
battery backup switchover voltage (V
SO
), the control circuitry connects the battery which
maintains data and clock operation until valid power returns.
Table 2. Operating modes
Note: X = V
IH
or V
IL
;
V
SO
= Battery backup switchover voltage.
Mode V
CC
E1 E2 G W DQ0-DQ7 Power
Deselect
4.75 to 5.5 V
or
4.5 to 5.5 V
V
IH
X X X High Z Standby
Deselect X V
IL
X X High Z Standby
WRITE V
IL
V
IH
XV
IL
D
IN
Active
READ V
IL
V
IH
V
IL
V
IH
D
OUT
Active
READ V
IL
V
IH
V
IH
V
IH
High Z Active
Deselect
V
SO
to
V
PFD
(min)
(1)
1. See Table 11 on page 22 for details.
XXXXHigh ZCMOS standby
Deselect V
SO
(1)
X X X X High Z Battery backup mode
M48T08, M48T08Y, M48T18 Operation modes
Doc ID 2411 Rev 11 9/31
2.1 READ mode
The M48T08/18/08Y is in the READ mode whenever W (WRITE enable) is high, E1 (chip
enable 1) is low, and E2 (chip enable 2) is high. The device architecture allows ripple-
through access of data from eight of 65,536 locations in the static storage array. Thus, the
unique address specified by the 13 address inputs defines which one of the 8,192 bytes of
data is to be accessed. Valid data will be available at the data I/O pins within address access
time (t
AVQV
) after the last address input signal is stable, providing that the E1, E2, and G
access times are also satisfied. If the E1
, E2 and G access times are not met, valid data will
be available after the latter of the chip enable access times (t
E1LQV
or t
E2HQV
) or output
enable access time (t
GLQV
).
The state of the eight three-state data I/O signals is controlled by E1
, E2 and G. If the
outputs are activated before t
AVQV
, the data lines will be driven to an indeterminate state
until t
AVQV
. If the address inputs are changed while E1, E2 and G remain active, output data
will remain valid for output data hold time (t
AXQX
) but will go indeterminate until the next
address access.
Figure 5. READ mode AC waveforms
Note: WRITE enable (W
) = high.
AI00962
tAVAV
tAVQV tAXQX
tE1LQV
tE1LQX
tE1HQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A12
E1
G
DQ0-DQ7
tE2HQV
tE2HQX
VALID
tE2LQZ
E2

M48T18-100PC1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Real Time Clock 64K (8Kx8) 100ns
Lifecycle:
New from this manufacturer.
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