Data Sheet HMC8500
Rev. 0 | Page 3 of 16
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.01 GHz to 0.8 GHz.
Table 1.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.01 0.8 GHz
GAIN
Small Signal Gain 18.0 20.0 dB
Gain Flatness ±1.5 dB
RETURN LOSS
Input 7 dB
Output 7 dB
POWER
Output Power at 30 dBm Input Power P
OUT
40 dBm
Power Added Efficiency PAE 55 %
OUTPUT THIRD-ORDER INTERCEPT IP3 48 dBm Measurement taken at P
OUT
/tone = 30 dBm
NOISE FIGURE NF 5 dB
TOTAL SUPPLY CURRENT I
DD
100 mA Adjust the gate bias control voltage (V
GG
) between
−8 V and 0 V to achieve I
DD
= 100 mA typical
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 0.8 GHz to 1.5 GHz.
Table 2.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 0.8 1.5 GHz
GAIN
Small Signal Gain 14.0 16.0 dB
Gain Flatness ±1.0 dB
RETURN LOSS
Input 8 dB
Output 8 dB
POWER
Output Power at 30 dBm Input Power P
OUT
40 dBm
Power Added Efficiency PAE 55 %
OUTPUT THIRD-ORDER INTERCEPT IP3 50 dBm Measurement taken at P
OUT
/tone = 30 dBm
NOISE FIGURE NF 4.5 dB
TOTAL SUPPLY CURRENT I
DD
100 mA Adjust the gate bias control voltage (V
GG
) between
−8 V and 0 V to achieve I
DD
= 100 mA typical
HMC8500 Data Sheet
Rev. 0 | Page 4 of 16
T
A
= 25°C, V
DD
= 28 V, I
DD
= 100 mA, frequency range = 1.5 GHz to 2.8 GHz.
Table 3.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 1.5 2.8 GHz
GAIN
Small Signal Gain 12.0 15.0 dB
Gain Flatness ±0.75 dB
RETURN LOSS
Input 10 dB
Output 10 dB
POWER
Output Power at 30 dBm Input Power P
OUT
40 dBm
Power Added Efficiency PAE 60 %
OUTPUT THIRD-ORDER INTERCEPT IP3 47 dBm Measurement taken at P
OUT
/tone = 30 dBm
NOISE FIGURE NF 4.5 dB
TOTAL SUPPLY CURRENT I
DD
100 mA Adjust the gate bias control voltage (V
GG
) between
−8 V and 0 V to achieve I
DD
= 100 mA typical
TOTAL SUPPLY CURRENT BY V
DD
Table 4.
Parameter Symbol Min Typ Max Unit Test Conditions/Comments
SUPPLY CURRENT I
DD
Adjust the gate bias control voltage (V
GG
) between −8 V and 0 V to achieve
I
DD
= 100 mA typical
V
DD
= 24 V 100 mA
V
DD
= 28 V 100 mA
V
DD
= 32 V 100 mA
Data Sheet HMC8500
Rev. 0 | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
1
Rating
Drain Bias Voltage (V
DD
) 35 V dc
Gate Bias Voltage (V
GG
) −8 V to 0 V dc
Radio Frequency (RF) Input Power (RFIN) 33 dBm
Maximum Voltage Standing Wave Ratio
(VSWR)
2
6:1
Channel Temperature 225°C
Maximum Peak Reflow Temperature (MSL3)
3
260°C
Continuous Power Dissipation, P
DISS
(T
A
= 85°C,
Derate 108.6 mW/°C Above 85°C)
12.5 W
Storage Temperature Range −40°C to +125°C
Operating Temperature Range −40°C to +85°C
ESD Sensitivity (Human Body Model) Class 1B, passed
500 V
1
When referring to a single function of a multifunction pin in the parameters,
only the portion of the pin name that is relevant to the Absolute Maximum
Rating is listed. For full pin names of multifunction pins, refer to the Pin
Configuration and Function Descriptions section.
2
Restricted by maximum power dissipation.
3
See the Ordering Guide for additional information.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θ
JC
is the junction to case thermal resistance.
Table 6. Thermal Resistance
Package Type θ
JC
Unit
CG-32-1
1
9.2 °C/W
1
Thermal impedance simulated values are based on a JEDEC 2S2P thermal
test board with 36 thermal vias. See JEDEC JESD51.
ESD CAUTION

HMC8500LP5DE

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier High Power GaN Amps 10W 1-2.5GHz PA
Lifecycle:
New from this manufacturer.
Delivery:
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