December 1997 2
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1=gate
2 = drain
3 = source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
Fig.1 Simplified outline and symbol.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
Drain-source voltage V
DS
max. 20 V
Drain current (DC or average) I
D
max. 30 mA
Total power dissipation
up to T
amb
=40 CP
tot
max. 250 mW
BF510 511 512 513
Drain current 0.7 2.5 6 10 mA
V
DS
=10 V; V
GS
= 0 I
DSS
3.0 7.0 12 18 mA
Transfer admittance (common source)
V
DS
=10 V; V
GS
=0; f = 1 kHz y
fs
2.5467mS
Feedback capacitance
V
DS
= 10 V; V
GS
=0 C
rs
typ. 0.3 0.3 pF
V
DS
= 10 V; I
D
=5 mA C
rs
typ. 0.3 0.3 pF
Noise figure at optimum source admittance
G
S
=1 mS; B
S
= 3 mS; f = 100 MHz
V
DS
=10 V; V
GS
=0 F typ. 1.5 1.5 dB
V
DS
=10 V; I
D
=5 mA F typ. 1.5 1.5 dB
