December 1997 4
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): V
DS
=10 V; V
GS
= 0; T
amb
=25 C for BF510 and BF511
V
DS
=10 V; I
D
= 5 mA; T
amb
=25 C for BF512 and BF513
y-parameters (common source) BF510 511 512 513
Input capacitance at f = 1 MHz C
is
5555pF
Input conductance at f = 100 MHz g
is
typ. 100906050S
Feedback capacitance at f = 1 MHz C
rs
typ. 0.4 0.4 0.4 0.4 pF
0.5 0.5 0.5 0.5 pF
Transfer admittance at f = 1 kHz y
fs
2.5 4.0 4.0 3.5 mS
V
GS
= 0 instead of I
D
=5 mA y
fs
6.0 7.0 mS
Transfer admittance at f = 100 MHz y
fs
typ. 3.5 5.5 5.0 5.0 mS
Output capacitance at f = 1 MHz C
os
3333pF
Output conductance at f = 1 MHz g
os
60 80 100 120 S
Output conductance at f = 100 MHz g
os
typ. 35 55 70 90 S
Noise figure at optimum source admittance
G
S
=1 mS; B
S
=3 mS;
f = 100 MHz F typ. 1.5 1.5 1.5 1.5 dB
Fig.2 V
GS
= 0 for BF510 and BF511;
I
D
= 5 mA for BF512 and BF513;
f = 1 MHz; T
amb
= 25 C.
handbook, halfpage
0
typ
20
1.5
0
0.5
1
C
rs
(pF)
V
DS
(V)
4 8 12 16
MDA275
Fig.3 V
DS
= 10 V; f = 1 kHz; T
amb
=25 C; typical
values.
handbook, halfpage
05
|y
fs
|
(mS)
I
D
(mA)
10 15
10
0
8
6
4
2
MDA276
BF511
BF510
BF512
BF513
