NVT2008_NVT2010 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 3 — 27 January 2014 13 of 33
NXP Semiconductors
NVT2008; NVT2010
Bidirectional voltage-level translator
9. Recommended operating conditions
[1] V
ref(A)
V
ref(B)
1 V for best results in level shifting applications.
10. Static characteristics
[1] All typical values are at T
amb
=25C.
[2] Not production tested, maximum value based on characterization data of typical parts.
[3] Measured by the voltage drop between the An and Bn terminals at the indicated current through the switch. ON-state resistance is
determined by the lowest voltage of the two terminals.
[4] See curves in Figure 12
for typical temperature and V
I(EN)
behavior.
[5] Guaranteed by design.
Table 10. Operating conditions
Symbol Parameter Conditions Min Max Unit
V
I/O
voltage on an input/output pin An, Bn 0 5.5 V
V
ref(A)
[1]
reference voltage (A) VREFA 0 5.4 V
V
ref(B)
[1]
reference voltage (B) VREFB 0 5.5 V
V
I(EN)
input voltage on pin EN 0 5.5 V
I
sw(pass)
pass switch current - 64 mA
T
amb
ambient temperature operating in free-air 40 +85 C
Table 11. Static characteristics
T
amb
=
40
C to +85
C, unless otherwise specified.
Symbol Parameter Conditions Min Typ
[1]
Max Unit
V
IK
input clamping voltage I
I
= 18 mA; V
I(EN)
=0V - - 1.2 V
I
IH
HIGH-level input current V
I
=5V; V
I(EN)
=0V --5A
C
i(EN)
input capacitance on pin EN V
I
= 3 V or 0 V - 17 - pF
C
io(off)
off-state input/output capacitance An, Bn; V
O
=3Vor0V;
V
I(EN)
=0V
- 56pF
C
io(on)
on-state input/output capacitance An, Bn; V
O
=3Vor0V;
V
I(EN)
=3V
-11.513
[2]
pF
R
on
ON-state resistance
[3][4]
An, Bn; V
I
=0V;I
O
=64mA;
V
I(EN)
=4.5V
[5]
12.75.0
V
I
=2.4V; I
O
=15mA;
V
I(EN)
=4.5V
-4.87.5
