BSL308PEH6327XTSA1

P1-P3 P4-P6 P7-P9

BSL308PE

OptiMOS™ P3 Small-Signal-Transistor

Features

• Dual P-channel

• Enhancement mode

• Logic level (4.5V rated)

• ESD protected

• Qualified according to AEC Q101

• 100% Lead-free; RoHS compliant

• Halogen free according to IEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter

1)

Symbol Conditions Unit

Continuous drain current

I

D

T

A

=25 °C

-2.0 A

T

A

=70 °C

-1.6

Pulsed drain current

I

D,pulse

T

A

=25 °C

-8.0

Avalanche energy, single pulse

E

AS

I

D

=-2 A, R

GS

=25 W

-10.7 mJ

Reverse diode dv/dt dv /dt

I

D

=-2 A,

V

DS

=-16V,

di/dt=-200A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

2)

P

tot

T

A

=25 °C

W

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM 2 (2kV to 4kV)

Soldering Temperature 260 °C °C

IEC climatic category; DIN IEC 68-1 55/150/56 °C

1)

Only one of both transistors in operation

Value

0.5

Type

Package

Tape and Reel Information

Marking

Lead Free

Packing

BSL308PE

PG-TSOP-6

H6327: 3000 pcs/ reel

sPR

Yes

Non dry

3

1

2

4

5

6

V

DS

-30

V

R

DS(on),max

V

GS

=-10 V

80

mW

V

GS

=-4.5 V

130

I

D

-2.0

A

Product Summary

PG-TSOP-6

Rev 2.03 page 1 2013-11-07

BSL308PE

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance,

junction - ambient

R

thJA

minimal footprint

2)

- - 250 K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

= 0V, I

D

=-250µA

-30 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=-11µA

-2.0 -1.5 -1.0

Drain-source leakage current

I

DSS

V

DS

=-30V, V

GS

=0 V,

T

j

=25 °C

- - -1

mA

V

DS

=-30V, V

GS

=0V,

T

j

=150 °C

- - -100

Gate-source leakage current

I

GSS

V

GS

=-20V, V

DS

=0V

- - -5

mA

Drain-source on-state resistance

R

DS(on)

V

GS

=-4.5 V,

I

D

=-1.7 A

- 88 130

mW

V

GS

=-10 V, I

D

=-2 A

- 62 80

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=-1.6 A

4.6 - S

Values

2)

Performed on 40mm

2

FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB.

Rev 2.03 page 2 2013-11-07

BSL308PE

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 376 500 pF

Output capacitance

C

oss

- 196 261

Reverse transfer capacitance

C

rss

- 12 18

Turn-on delay time

t

d(on)

- 5.6 - ns

Rise time

t

r

- 7.7 -

Turn-off delay time

t

d(off)

- 15.3 -

Fall time

t

f

- 2.8 -

Gate Charge Characteristics

Gate to source charge

Q

gs

- -1.2 - nC

Gate to drain charge

Q

gd

- -0.6 -

Gate charge total

Q

g

- -5.0 -

Gate plateau voltage

V

plateau

- -3.1 - V

Reverse Diode

Diode continous forward current

I

S

- - -0.4 A

Diode pulse current

I

S,pulse

- - -8.4

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=-2 A,

T

j

=25 °C

- -0.8 -1.1 V

Reverse recovery time

t

rr

- 14 - ns

Reverse recovery charge

Q

rr

- -5.9 - nC

V

R

=-10 V, I

F

=-2 A,

di

F

/dt=100 A/µs

T

A

=25 °C

Values

V

GS

=0 V,

V

DS

=-15 V, f=1 MHz

V

DD

=-15V,

V

GS

=-10 V,

I

D

=-2 A, R

G,ext

=6 W

V

DD

=-15 V, I

D

=-2 A,

V

GS

=0 to -10 V

Rev 2.03 page 3 2013-11-07

P1-P3 P4-P6 P7-P9

BSL308PEH6327XTSA1

Mfr. #:

Buy BSL308PEH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET SMALL SIGNAL+P-CH

Lifecycle:

New from this manufacturer.

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BSL308PEH6327XTSA1