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BSL308PEH6327XTSA1

P1-P3P4-P6P7-P9
BSL308PE
1 Power dissipation 2 Drain current
P
tot
=f(T
A
) I
D
=f(T
A
); V
GS
≥-10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C; D=0 Z
thJA
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
-1
10
0
10
1
10
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
[A]
V
DS
[V]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
Z
thJA
[K/W]
t
p
[s]
0
0.125
0.25
0.375
0.5
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0 20 40 60 80 100 120 140 160
I
D
[A]
T
A
[°C]
Rev 2.03 page 4 2013-11-07
BSL308PE
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
0
2
4
6
8
10
0 1 2 3 4 5 6
g
fs
[S]
I
D
[A]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
[A]
V
DS
[V]
25 °C
150 °C
0
1
2
3
4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
D
[A]
V
GS
[V]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5 3 3.5 4
R
DS(on)
[mW]
I
D
[A]
Rev 2.03 page 5 2013-11-07
BSL308PE
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=-2 A; V
GS
=-10 V V
GS(th)
=f(T
j
); V
DS
=V
GS
; I
D
=11 µA
parameter: I
D
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz; T
j
=25°C I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
20
40
60
80
100
120
140
-60 -20 20 60 100 140 180
R
DS(on)
[mW]
T
j
[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
0 5 10 15 20
C [pF]
V
DS
[V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-3
10
-2
10
-1
10
0
10
1
0 0.4 0.8 1.2 1.6
I
F
[A]
V
SD
[V]
Rev 2.03 page 6 2013-11-07
P1-P3P4-P6P7-P9

BSL308PEH6327XTSA1

Mfr. #:
Buy BSL308PEH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET SMALL SIGNAL+P-CH
Lifecycle:
New from this manufacturer.
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