MAX8792
Single Quick-PWM Step-Down
Controller with Dynamic REFIN
______________________________________________________________________________________ 25
rough estimate and is no substitute for breadboard
evaluation, preferably including verification using a
thermocouple mounted on N
H
:
where C
OSS
is the N
H
MOSFET’s output capacitance,
Q
G(SW)
is the charge needed to turn on the N
H
MOS-
FET, and I
GATE
is the peak gate-drive source/sink cur-
rent (2.2A typ).
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied, due to the squared term in the C
x V
IN
2
x f
SW
switching-loss equation. If the high-side
MOSFET chosen for adequate R
DS(ON)
at low battery
voltages becomes extraordinarily hot when biased from
V
IN(MAX)
, consider choosing another MOSFET with
lower parasitic capacitance.
For the low-side MOSFET (N
L
), the worst-case power
dissipation always occurs at maximum input voltage:
The worst case for MOSFET power dissipation occurs
under heavy overloads that are greater than
I
LOAD(MAX)
, but are not quite high enough to exceed
the current limit and cause the fault latch to trip. To pro-
tect against this possibility, you can “overdesign” the
circuit to tolerate:
where I
VALLEY(MAX)
is the maximum valley current
allowed by the current-limit circuit, including threshold
tolerance and on-resistance variation. The MOSFETs
must have a good size heatsink to handle the overload
power dissipation.
Choose a Schottky diode (D
L
) with a forward voltage
low enough to prevent the low-side MOSFET body
diode from turning on during the dead time. Select a
diode that can handle the load current during the dead
times. This diode is optional and can be removed if effi-
ciency is not critical.
Boost Capacitors
The boost capacitors (C
BST
) must be selected large
enough to handle the gate charging requirements of
the high-side MOSFETs. Typically, 0.1μF ceramic
capacitors work well for low-power applications driving
medium-sized MOSFETs. However, high-current appli-
cations driving large, high-side, MOSFETs require
boost capacitors larger than 0.1μF. For these applica-
tions, select the boost capacitors to avoid discharging
the capacitor more than 200mV while charging the
high-side MOSFETs’ gates:
where N is the number of high-side MOSFETs used for
one regulator, and Q
GATE
is the gate charge specified
in the MOSFET’s data sheet. For example, assume (2)
IRF7811W n-channel MOSFETs are used on the high
side. According to the manufacturer’s data sheet, a sin-
gle IRF7811W has a maximum gate charge of 24nC
(V
GS
= 5V). Using the above equation, the required
boost capacitance would be:
Selecting the closest standard value, this example
requires a 0.22μF ceramic capacitor.
Minimum Input-Voltage Requirements
and Dropout Performance
The output voltage-adjustable range for continuous-
conduction operation is restricted by the nonadjustable
minimum off-time one-shot. For best dropout perfor-
mance, use the slower (200kHz) on-time settings. When
working with low-input voltages, the duty-factor limit
must be calculated using worst-case values for on- and
off-times. Manufacturing tolerances and internal propa-
gation delays introduce an error to the on-times. This
error is greater at higher frequencies. Also, keep in
mind that transient response performance of buck reg-
ulators operated too close to dropout is poor, and bulk
output capacitance must often be added (see the V
SAG
equation in the
Quick-PWM Design Procedure
section).
The absolute point of dropout is when the inductor cur-
rent ramps down during the minimum off-time (ΔI
DOWN
)
as much as it ramps up during the on-time (ΔI
UP
). The
ratio h = ΔI
UP
/ΔI
DOWN
is an indicator of the ability to
slew the inductor current higher in response to
increased load, and must always be greater than 1. As
h approaches 1, the absolute minimum dropout point,
the inductor current cannot increase as much during
each switching cycle and V
SAG
greatly increases
unless additional output capacitance is used.
C
nC
mV
F
BST
=
×
=
224
200
024. μ
C
NQ
mV
BST
GATE
=
×
200
II
I
I
I LIR
LOAD VALLEY MAX
L
VALLEY MAX
LOAD MAX
=+
=+
()
()
()
Δ
2
2
PD N sistive
V
V
IR
L
OUT
IN MAX
LOAD DS ON
( Re )
()
()
=−
()
1
2
PD N Switching V I f
Q
I
CVf
H IN MAX LOAD SW
GSW
GATE
OSS IN SW
( )
()
()
=
+
2
2
MAX8792
Single Quick-PWM Step-Down
Controller with Dynamic REFIN
26 ______________________________________________________________________________________
A reasonable minimum value for h is 1.5, but adjusting this
up or down allows trade-offs between V
SAG
, output capac-
itance, and minimum operating voltage. For a given value
of h, the minimum operating voltage can be calculated as:
where V
FB
is the feedback voltage, V
CHG
and V
DIS
are
the parasitic voltage drop in the charge and discharge
paths, V
DROOP
is the voltage-positioning droop, and
t
OFF(MIN)
is from the
Electrical Characteristics
table. The
absolute minimum input voltage is calculated with h = 1.
If the calculated V
IN(MIN)
is greater than the required min-
imum input voltage, then reduce the operating frequency
or add output capacitance to obtain an acceptable V
SAG
.
If operation near dropout is anticipated, calculate V
SAG
to be sure of adequate transient response.
Dropout Design Example:
V
FB
= 2V
V
OUT
= 3.3V
f
SW
= 300kHz
t
OFF(MIN)
= 350ns
No droop/load line (V
DROOP
= 0)
V
CHG
and V
DIS
= 150mV (10A load)
h = 1.5:
Calculating again with h = 1 gives the absolute limit of
dropout:
Therefore, V
IN
must be greater than 4.21V, even with
very large output capacitance, and a practical input volt-
age with reasonable output capacitance would be 4.74V.
Applications Information
PCB Layout Guidelines
Careful PCB layout is critical to achieve low switching
losses and clean, stable operation. The switching
power stage requires particular attention. If possible,
mount all the power components on the top side of the
board with their ground terminals flush against one
another. Follow these guidelines for good PCB layout:
1) Keep the high-current paths short, especially at the
ground terminals. This is essential for stable, jitter-
free operation.
2) Connect all analog grounds to a separate solid
copper plane, which connects to the GND pin of
the Quick-PWM controller. This includes the V
CC
bypass capacitor, REF bypass capacitors, REFIN
components, and feedback compensation/dividers.
3) Keep the power traces and load connections short.
This is essential for high efficiency. The use of thick
copper PCBs (2oz vs. 1oz) can enhance full-load effi-
ciency by 1% or more. Correctly routing PCB traces
is a difficult task that must be approached in terms of
fractions of centimeters, where a single mΩ of excess
trace resistance causes a measurable efficiency
penalty.
4) Keep the high-current, gate-driver traces (DL, DH,
LX, and BST) short and wide to minimize trace
resistance and inductance. This is essential for
high-power MOSFETs that require low-impedance
gate drivers to avoid shoot-through currents.
5) When trade-offs in trace lengths must be made, it is
preferable to allow the inductor charging path to be
made longer than the discharge path. For example,
it is better to allow some extra distance between the
input capacitors and the high-side MOSFET than to
allow distance between the inductor and the low-
side MOSFET or between the inductor and the out-
put filter capacitor.
6) Route high-speed switching nodes away from sen-
sitive analog areas (REF, REFIN, FB, ILIM).
Layout Procedure
1) Place the power components first, with ground ter-
minals adjacent (low-side MOSFET source, C
IN
,
C
OUT
, and D1 anode). If possible, make all these
connections on the top layer with wide, copper-
filled areas.
2) Mount the controller IC adjacent to the low-side
MOSFET. The DL gate traces must be short and
wide (50 mils to 100 mils wide if the MOSFET is 1in
from the controller IC).
3) Group the gate-drive components (BST capacitors,
V
DD
bypass capacitor) together near the controller IC.
4) Make the DC-DC controller ground connections as
shown in the
Standard Application Circuits
. This
diagram can be viewed as having three separate
ground planes: input/output ground, where all the
high-power components go; the power ground
plane, where the PGND pin and V
DD
bypass
capacitor go, and the controller’s analog ground
plane where sensitive analog components, the
GND pin, and V
CC
bypass capacitor go. The ana-
log GND plane must meet the PGND plane only at a
V
VVV V
Vx VV
IN MIN()
..
.
=
+
()
+
−−
233 0 015
21330
.
.
0 15 350 300
421
V x ns kHz
V
()
×
=
V
VVV V
VV
IN MIN()
..
..
=
+
()
×
−−
233 0 015
215330
VVVxnskHz
V
+
()
×
=
.
.
0 15 350 300
474
V
VV V V
VhV V V t f
IN MIN
FB OUT DROOP CHG
FB OUT DROOP DIS OFF MIN SW
()
()
()
()
=
+
+
−−
MAX8792
Single Quick-PWM Step-Down
Controller with Dynamic REFIN
______________________________________________________________________________________ 27
single point directly beneath the IC. Connect to the
high-power output ground using a short metal trace
from PGND to the source of the low-side MOSFET.
This point must also be very close to the output
capacitor ground terminal.
5) Connect the output power planes (V
OUT
and sys-
tem ground planes) directly to the output filter
capacitor positive and negative terminals with multi-
ple vias. Place the entire DC-DC converter circuit
as close to the load as is practical.
Chip Information
PROCESS: BiCMOS
Package Information
For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages
. Note that a “+”, “#”, or “-” in
the package code indicates RoHS status only. Package draw-
ings may show a different suffix character, but the drawing per-
tains to the package regardless of RoHS status.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
14 TDFN-EP T1433-1
21-0137

MAX8792ETD+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Switching Controllers Single Quick-PWM Step-Down Controller
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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