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IRF5851TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P14
Max.
N-Channel P-Channel
V
DS
Drain-to-Source Voltage 20 -20
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 2.7 -2.2
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 2.2 -1.7
I
DM
Pulsed Drain Current 11 -9.0
P
D
@T
A
= 25°C Power Dissipation 0.96 W
P
D
@T
A
= 70°C Power Dissipation 0.62
Linear Derating Factor 7.7 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range °C
N-Ch P-Ch
V
DSS
20V -20V
R
DS(on)
0.090Ω 0.135Ω
HEXFET
®
Power MOSFET
04/20/10
IRF5851PbF
Description
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 130 °C/W
Thermal Resistance
www.irf.com 1
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
R
DS(on)
reduction enables an increase in current-handling capability.
Parameter
Units
A
Absolute Maximum Ratings
-55 to + 150
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
TSOP-6
PD-95341A
IRF5851PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 — — V
GS
= 0V, I
D
= 250µA
P-Ch -20 — — V
GS
= 0V, I
D
= -250µA
N-Ch — 0.016 — Reference to 25°C, I
D
= 1mA
P-Ch — -0.011 — Reference to 25°C, I
D
= -1mA
— — 0.090 V
GS
= 4.5V, I
D
= 2.7A
— — 0.120 V
GS
= 2.5V, I
D
= 2.2A
— — 0.135 V
GS
= -4.5V, I
D
= -2.2A
— — 0.220 V
GS
= -2.5V, I
D
= -1.7A
N-Ch 0.60 — 1.25 V
DS
= V
GS
, I
D
= 250µA
P-Ch -0.45 — -1.2 V
DS
= V
GS
, I
D
= -250µA
N-Ch 5.2 — — V
DS
= 10V, I
D
= 2.7A
P-Ch 3.5 — — V
DS
= -10V, I
D
= -2.2A
N-Ch — — 1.0 V
DS
= 16 V, V
GS
= 0V
P-Ch — — -1.0 V
DS
= -16V, V
GS
= 0V
N-Ch — — 25 V
DS
= 16 V, V
GS
= 0V, T
J
= 70°C
P-Ch — — -25 V
DS
= -16V, V
GS
= 0V, T
J
= 70°C
I
GSS
Gate-to-Source Forward Leakage N-P –– — ±100 V
GS
= ± 12V
N-Ch — 4.0 6.0
P-Ch — 3.6 5.4
N-Ch — 0.95 —
P-Ch — 0.66 —
N-Ch — 0.83 —
P-Ch — 5.7 —
N-Ch — 6.6 —
P-Ch — 8.3 —
N-Ch — 1.2 —
P-Ch — 14 —
N-Ch — 15 —
P-Ch — 31 —
N-Ch — 2.4 —
P-Ch — 28 —
N-Ch — 400 —
P-Ch — 320 —
N-Ch — 48 —
P-Ch — 56 —
N-Ch — 32 —
P-Ch — 40 —
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
V/°C
Ω
V
S
µA
nC
ns
pF
N-Channel
I
D
= 2.7A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -10V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.2Ω,
V
GS
= 4.5V
P-Channel
V
DD
= -10V, I
D
= -1.0A, R
G
= 6.0Ω,
V
GS
= -4.5V
N-Channel
V
GS
= 0V, V
DS
= 15V, ƒ = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, ƒ = 1.0MHz
N-Ch
P-Ch
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 & 26 )
Surface mounted on FR-4 board, t ≤ 10sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 0.96
P-Ch — — -0.96
N-Ch — — 11
P-Ch — — -9.0
N-Ch — — 1.2 T
J
= 25°C, I
S
= 0.96A, V
GS
= 0V
P-Ch — — -1.2 T
J
= 25°C, I
S
= -0.96A, V
GS
= 0V
N-Ch — 25 38
P-Ch — 23 35
N-Ch — 6.5 9.8
P-Ch — 7.7 12
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
= 0.96A, di/dt = 100A/µs
P-Channel
T
J
= 25°C, I
F
= -0.96A, di/dt = -100A/µs
IRF5851PbF
www.irf.com 3
N-Channel
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
1.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
0.1
1
10
100
1.5 2.0 2.5 3.0
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
2.7A
Fig 4. Normalized On-Resistance
Vs. Temperature
P1-P3P4-P6P7-P9P10-P12P13-P14

IRF5851TRPBF

Mfr. #:
Buy IRF5851TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT DUAL N/PCh 20V 2.7A Micro 6
Lifecycle:
New from this manufacturer.
Delivery:
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