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IRF5851TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P14
IRF5851PbF
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
1 10 100
0
100
200
300
400
500
600
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
2.7A
V = 10V
DS
V = 16V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
N-Channel
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
IRF5851PbF
www.irf.com 5
N-Channel
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
4.5V
+
-
V
DD
IRF5851PbF
6 www.irf.com
N-Channel
Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
GS,
Gate -to -Source Voltage (V)
0.06
0.08
0.10
0.12
0.14
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 2.7A
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
4.5 V
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
024681012
I
D
, Drain Current (A)
0.00
0.10
0.20
0.30
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= 4.5V
V
GS
= 2.5V
P1-P3P4-P6P7-P9P10-P12P13-P14

IRF5851TRPBF

Mfr. #:
Buy IRF5851TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT DUAL N/PCh 20V 2.7A Micro 6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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