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IRF5851TRPBF

P1-P3P4-P6P7-P9P10-P12P13-P14
IRF5851PbF
www.irf.com 7
Fig 14. Threshold Voltage Vs. Tempera-
ture
Fig 15. Typical Power Vs. Time
N-Channel
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.4
0.6
0.8
1.0
1.2
V
G
S
(
t
h
)
,
V
a
r
i
a
c
e
(
V
)
I
D
= 250µA
0.001 0.010 0.100 1.000 10.000
Time (sec)
0
4
8
12
16
20
24
P
o
w
e
r
(
W
)
IRF5851PbF
8 www.irf.com
P-Channel
Fig 18. Typical Transfer Characteristics
Fig 17. Typical Output Characteristics
Fig 16. Typical Output Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-2.2A
Fig 19. Normalized On-Resistance
Vs. Temperature
0.1
1
10
1.2 1.6 2.0 2.4 2.8
V = -15V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
IRF5851PbF
www.irf.com 9
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 23. Maximum Safe Operating Area
1 10 100
0
100
200
300
400
500
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-2.2A
V =-10V
DS
V =-16V
DS
Fig 22. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
P-Channel
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
P1-P3P4-P6P7-P9P10-P12P13-P14

IRF5851TRPBF

Mfr. #:
Buy IRF5851TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT DUAL N/PCh 20V 2.7A Micro 6
Lifecycle:
New from this manufacturer.
Delivery:
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